
Allicdata Part #: | TPN11006NLLQTR-ND |
Manufacturer Part#: |
TPN11006NL,LQ |
Price: | $ 0.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 60V 17A 8TSON |
More Detail: | N-Channel 60V 17A (Tc) 700mW (Ta), 30W (Tc) Surfac... |
DataSheet: | ![]() |
Quantity: | 3000 |
3000 +: | $ 0.22691 |
Vgs(th) (Max) @ Id: | 2.5V @ 200µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-TSON Advance (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 700mW (Ta), 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | U-MOSVIII-H |
Rds On (Max) @ Id, Vgs: | 11.4 mOhm @ 8.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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TPN11006NL,LQ is a common type of field effect transistor (FET) used in a variety of electronic applications. A field effect transistor, or FET, is a type of semiconductor device that is used to control the flow of electric current between two different terminals. FETs are composed of a channel of semiconductor material that is surrounded by several types of electrodes, and can be used to either amplify or switch electric signals. The TPN11006NL,LQ is a single FET, meaning that it consists of only one channel of semiconductor material.The TPN11006NL,LQ can be used in a variety of electronic applications, including amplifiers, signal processors, switches, and digital logic gates. In amplifiers, the FET acts as a voltage amplifier, boosting the strength of a signal from a low voltage to a higher voltage. In signal processors, the TPN11006NL,LQ can be used to filter out unwanted noise or signals. The FET can also be used as a switch, controlling the flow of electric current between two different terminals, and in digital logic gates, the FET can be used to convert an electrical signal into a binary number.In order to understand how the TPN11006NL,LQ works, it is first important to understand the basic principles of field effect transistors. A FET is a type of transistor that consists of a semiconductor channel, which is surrounded by two types of electrodes. The source and the drain electrodes, which are connected to the two terminals of the FET, are responsible for controlling the flow of current through the semiconductor channel. When a voltage is applied to the gate of the FET, it creates an electric field that affects the ability of the FET to conduct current. This electric field causes the resistance of the FET to decrease, which then allows more current to flow through the circuit.By carefully selecting the type and size of the FET and the voltage applied to its gate, a user can control the current flow through the circuit with great precision. This makes the TPN11006NL,LQ ideal for applications where precise control of current flow is necessary. Additionally, the small size of the FET makes it ideal for use in small electronic devices, as it takes up very little space on a circuit board.In summary, the TPN11006NL,LQ is a single FET, which can be used in a variety of electronic applications. By applying a voltage to the gate of the FET, users can precisely control the flow of electric current through the FET in order to achieve the desired effect. Additionally, the small size of the FET makes it ideal for use in small devices. As a result, the TPN11006NL,LQ is an ideal solution for a wide range of applications.
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