TPN1110ENH,L1Q

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The TPN 1110 ENH,L1Q is a N-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) which provides low gate-to-drain capacitance, low on-state resistance, low gate threshold voltage, and fast switching characteristics. It is used in a variety of applications, including power management systems, signal switching, motor control circuits, and analog circuits.

The TPN 1110 ENH,L1Q MOSFET features N-type MOSFET technology in a single package. It has a low gate-to-drain capacitance of 0.8 pF and a low on-state resistance of 9.55 mΩ. Its fast switching time of 50 ns guarantees high switching speed with reduced power consumption. It features an operating temperature range of -40°C to +125°C, and a drain-to-source breakdown voltage of 30 V.

MOSFETs utilize a gate to manipulate the current flow between the source and the drain, depending on the voltage applied to the gate. The TPN 1110 ENH,L1Q provides low threshold voltage of 0.9 V and a low maximum drain current of 0.6 A, which enables efficient power control in digital broadcasting systems and audio applications. It also has low gate charge of 5.4 nC, which ensures high system efficiency.

MOSFETs are a type of transistor commonly used in power management circuits. They are capable of controlling the current flow in circuits with full switching range from 0V to the voltage applied to the gate. The TPN 1110 ENH,L1Q MOSFET utilizes N-type MOSFET technology which has low on-resistance and fast switching time, resulting in high efficiency. This device also features low gate threshold voltage, low gate-to-drain capacitance, and fast switching characteristics which make it ideal for a wide range of applications, including power management systems, signal switching, motor control circuits, and analog circuits.

In addition, the TPN 1110 ENH,L1Q offers over-temperature and over-voltage protection, making it suitable for automotive and industrial applications. Its robust design and low power consumption ensures high reliability and durability. In addition, it offers low noise and low EMI characteristics which help reduce system noise emissions.

Overall, the TPN 1110 ENH,L1Q is a single package N-channel enhancement mode MOSFET designed for power management systems, signal switching, motor control circuits, and analog circuits. It features a low gate-to-drain capacitance, low on-state resistance, low gate threshold voltage, fast switching time, and high efficiency. The MOSFET also offers over-temperature and over-voltage protection, low noise and low EMI levels, making it suitable for a variety of applications.

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