TPN14006NH,L1Q

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Field-effect transistors are electronic components that are commonly used in a wide range of electronic circuits. Field-effect transistors, or FETs, control current between two electrodes using a gate terminal. The gate terminal is used to modulate the electric field applied to the device. The TPN14006NH,L1Q is a field-effect transistor designed for high-speed switching applications. This article will discuss the application field and working principle of the TPN14006NH,L1Q.

Application Field of TPN14006NH,L1Q

The TPN14006NH,L1Q is a high-speed switching FET with a maximum gate charge of 4.8 nC. This makes the device ideal for high-frequency switching applications. The device has an ESD rating of 2 kV, making it suitable for use in high-voltage applications. The device is also specified to operate over a wide temperature range, making it suitable for commercial, industrial, and automotive applications. The device has a maximum forward drain current of 20 mA and a maximum reverse drain current of 10 mA, making it suitable for a variety of medium-power switching applications.

Working Principle of TPN14006NH,L1Q

The TPN14006NH,L1Q is a three-terminal field-effect transistor, consisting of a source, a drain, and a gate. When the gate terminal is left floating, the device is in its “off” state. When a voltage is applied to the gate terminal, the channel is turned “on” by the electric field. This allows current to flow from the source to the drain terminals. The on-state resistance of the device is determined by the gate voltage and can be minimized by increasing the gate voltage. The device has an on-state capacitance of 8 pF. The on-state capacitance is the source of the device’s high-speed switching ability.

Conclusion

The TPN14006NH,L1Q is a high-speed switching field-effect transistor designed for a variety of switching applications. The device has a maximum gate charge of 4.8 nC and an ESD rating of 2 kV. The device is specified to operate over a wide temperature range and has a maximum forward and reverse drain current of 20 mA and 10 mA, respectively. The device is turned “on” by applying a voltage to the gate terminal, and the on-state resistance is determined by the gate voltage. The device also has an on-state capacitance of 8 pF, which is the source of the device’s high-speed switching ability.

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