TSM70N600CP ROG

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252, (D-Pak)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	83W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	743pF @ 100V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	12.6nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	600 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	8A (Tc)
Drain to Source Voltage (Vdss):	700V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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TSM70N600CP ROG Application Field and Working Principle

TSM70N600CP ROG is a device that belongs to a class of semiconductor devices known as FETs or Field-Effect Transistors. It is a single N-channel MOSFET, meaning it is composed of a single drain, source, and gate. It has an important role in the field of power electronics, as it is capable of performing a range of functions such as switching, amplification, and level shifting.The main application of the TSM70N600CP ROG is to act as a switching device. This type of MOSFET is used for applications such as power converters, circuits for controlling motor speed, and power supplies.The working principle behind the TSM70N600CP ROG is based on the principle of controlling the flow of electrons through a semiconductor material. The MOSFET consists of two layers of semiconductor material, a source electrode, and a gate electrode. When the voltage is applied to the gate electrode, the semiconductor material in the source region and the drain region is charged with electrons. This charging causes a flow of electrons through the source and drain regions of the MOSFET.The flow of electrons is controlled by the gate voltage. When the voltage applied to the gate electrode is positive, the current flows from source to drain. When the gate voltage is reduced, the flow of current is also reduced. This change in current is used to control the power of the device, as well as the speed and direction of the motor, or the power supply.The TSM70N600CP ROG has certain advantages compared to other types of MOSFETs. It has a lower on-state resistance than other types of MOSFET, which means it is capable of handling higher amounts of power without significant power loss. It also has a higher switching speed and a faster recovery time, which allows for faster switching times in power electronics applications.In conclusion, the TSM70N600CP ROG is an important component in power electronics. It can be used for switching, amplification, and level shifting. It is a single N-channel MOSFET that has a lower on-state resistance and a faster switching time than other types of MOSFETs. These features make it an ideal choice for applications such as power converters, circuits for controlling motor speed, and power supplies.

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