TSM7NC65CF C0G Allicdata Electronics
Allicdata Part #:

TSM7NC65CFC0G-ND

Manufacturer Part#:

TSM7NC65CF C0G

Price: $ 0.84
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: MOSFET N-CH 650V 7A ITO220S
More Detail: N-Channel 650V 7A (Tc) 44.6W (Tc) Through Hole ITO...
DataSheet: TSM7NC65CF C0G datasheetTSM7NC65CF C0G Datasheet/PDF
Quantity: 1992
1 +: $ 0.76230
10 +: $ 0.67410
100 +: $ 0.53254
500 +: $ 0.41297
1000 +: $ 0.32603
Stock 1992Can Ship Immediately
$ 0.84
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: ITO-220S
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 44.6W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1169pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The TSM7NC65CF C0G is a type of transistor with few equal in terms of electrical performance. It is especially popular in many applications that require a high switching speed, a low parasitic capacitance, and a low-resistance drain source. It is part of the single MOSFETs family and is ideally suited for the most demanding applications.

Working Principle

MOSFETs work on the principle of a built-in field effect. This is where a small electric charge is induced on the surface of a semiconductor wafer, as well as in its body. A current flowing through the channel between a pair of electrodes, called the drain and source, will create an electric field. This will affect the conductivity of the semiconductor material, thus controlling the current that flows through the device.

Types and Characteristics

The TSM7NC65CF C0G stands out because of its low-voltage breakdown, low parasitic capacitance, and low-resistance drain source. In addition, it contains no integrated gate-source capacitance that can reduce performance. The built-in FET feature means that it does not require a gate, thereby reducing the complexity of the circuit.

Applications

The TSM7NC65CF C0G is best suited for applications that require a high switching speed, ultra-low-resistance drain source and a low capacitance. High-speed applications include high-speed switching, high-speed data transmission, and high-frequency testing applications.

It is also widely used in medium- to low-voltage applications, as it can offer a low-voltage breakdown and even low current consumption. Common applications include scanners, motor control, lighting equations, brushless motor controllers, power converters, power amplifiers, and optoelectronic devices.

Conclusion

The TSM7NC65CF C0G is an excellent choice of FET transistor for many applications. With its low-voltage breakdown, ultra-low-resistance drain source and low capacitance, it is well-suited to a range of medium- to low-voltage circuit applications. It is versatile and highly reliable, making it a great choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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