TSM70N900CI C0G Allicdata Electronics
Allicdata Part #:

TSM70N900CIC0G-ND

Manufacturer Part#:

TSM70N900CI C0G

Price: $ 1.37
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: MOSFET N-CH 700V 4.5A ITO220
More Detail: N-Channel 700V 4.5A (Tc) 50W (Tc) Through Hole ITO...
DataSheet: TSM70N900CI C0G datasheetTSM70N900CI C0G Datasheet/PDF
Quantity: 997
1 +: $ 1.24110
10 +: $ 1.10061
100 +: $ 0.86978
500 +: $ 0.67452
1000 +: $ 0.53251
Stock 997Can Ship Immediately
$ 1.37
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 482pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 900 mOhm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 700V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The TSMC70N900Ci C0G is a high performance and robust MOSFET (metal oxide semiconductor field-effect transistor) which is widely used in many applications. This device is in the class of single gate transistors, known as the “metal oxide semiconductor field-effect transistor” (MOSFET). This single-transistor technology offers the device a wide range of applications and an impressive performance due to its superior thermal and electrical characteristics.

The TSMC 70N900Ci C0G is an N-channel depletion mode transistor, which means that the power device has negative gate-source voltage (VGS) throughout most of its operating range. It also features a low on-resistance, making it suitable for power switching applications in various fields. The low on-resistance makes the device suitable for high-power switching applications, such as industrial motor control, solar inverter, and high-efficiency DC-DC converters. The device has a superior thermal performance, allowing it to handle larger voltages and currents than the traditional BJT (bipolar junction transistor).

The TSMC 70N900Ci C0G’s working principle is a fairly simple one. When a positive voltage is applied to the gate, electrons are drawn away from the source and enter the channel while holes leave the channel to enter the source. This process creates a depletion zone, and a depletion layer sets up between the source and the gate, allowing current to flow through the gate and into the channel. This current, known as the “gate current”, is then able to control the current flow between the source and drain terminal. To turn the device off, a negative voltage is applied to the gate, creating a reversed field, causing electrons to return to the source and holes back to the drain, preventing further current flow through the device.

The TSMC 70N900Ci C0G\'s wide range of features makes it a popular choice for various applications across many industries. Some of its main ones include: power management, logic control, motor control, and high-efficiency switching. Its low on-resistance makes this MOSFET suitable for high-power applications, such as industrial motor control, solar inverter, and high-efficiency DC-DC converters. Due to its robust and reliable performance, the device is also widely used in military and medical applications.

The TSMC 70N900Ci C0G is a powerful, reliable, and versatile single-gate MOSFET which is widely used in many high-performance applications. Its low on-resistance and superior thermal performances make it an ideal choice for high-power and high-efficiency switching applications. The device’s working principle is based on the process of creating a depletion layer between the gate and the source, which enables it to control current flow in between the terminals. It is also suitable for various industries, such as power management, logic control, motor control, and high-efficiency switching.

The specific data is subject to PDF, and the above content is for reference

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