TSM900N10CP ROG

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The TSM900N10CP ROG is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) created by Toshiba that has a range of applications, such as power supply rectification, motor control, frequency conversion, rotary motor control and so on. It is designed with a cascode-source structure, providing low-on-resistance performance and reliability in the harshest of environments.

The TSM900N10CP ROG is capable of operating at a maximum drain source voltage of 170V, a continuous drain current of 86A, and a drain source on-resistance of 8.9mΩ. As it is also an N-channel enhanced power MOSFET, it provides greater efficiency and improved performance than most standard MOSFETs, making it ideal for many operation-critical tasks.

The working principle of this MOSFET can be described using the three-terminal voltage-controlled device model, where the drain to source voltage (VDS) varies depending on the gate to source voltage (VGS), and the drain current (ID) will also vary accordingly. There is also a quantitative relationship between VDS and ID known as the transfer curve. Through this relationship, the TSM900N10CP ROG can efficiently achieve a wide range of operating and switching current effects. In addition, a gate to source voltage of less than 5V can bring about a higher level of controlled conduction effects.

The TSM900N10CP ROG is a perfect choice for a variety of applications, due to its low-on-resistance performance, high-frequency characteristics, low gate charge and improved reliability. Additionally, its fast switching characteristics make it ideal for high power applications, such as motor control, frequency conversion, high-frequency bridge rectifiers and other power semiconductor equipment. It can also provide ideal solutions for power saving, energy conservation, and heat dissipation for industrial and domestic applications.

In conclusion, the TSM900N10CP ROG power MOSFET is a reliable and efficient device, which can be widely used in a range of applications. Its ability to quickly and accurately control the power of electrical loads make it a popular choice, especially in temperature-sensitive and operation-critical situations. As such, it is an ideal solution for many power electronics and semiconductor devices in many industries.

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