TSM950N10CW RPG Allicdata Electronics
Allicdata Part #:

TSM950N10CWRPGTR-ND

Manufacturer Part#:

TSM950N10CW RPG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: MOSFET N-CH 100V 6.5A SOT223
More Detail: N-Channel 100V 6.5A (Tc) 9W (Tc) Surface Mount SOT...
DataSheet: TSM950N10CW RPG datasheetTSM950N10CW RPG Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 9W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 95 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The TSM950N10CW is an N-Channel enhancement mode MOSFET, or metal-oxide-semiconductor field-effect transistor, which is widely used in applications such as switching and amplifying electrical signals. It is a type of transistor that utilizes an electric field to control the flow of current. The TSM950N10CW MOSFET has excellent performance, featuring high curr​ent carrying capacity, low switching speeds, low on-resistance, and low voltage drop. This makes it an ideal choice for a variety of applications, such as DC/DC converters, switching regulators, power supplies, LED drivers, switching amplifiers, and so on.

This MOSFET is manufactured using a TO-247 package. It has a high current capability of 95A continuous (at a case temperature of 25°C) and a low maximum on-state resistance of 0.05ohms. In order to increase the electrical performance of the TSM950N10CW, the designers added a dielectric layer at the contact of the thermal interface. This provides excellent thermal performance and reduces junction temperature.

The working principle of the TSM950N10CW is similar to that of other transistors. It consists of a gate, source, drain, and substrate. When a voltage is applied at the gate, electrons from the source will be attracted to the gate. This creates an electric field at the region between the drain and source. Since the electric field is charged, it creates a resistance that results in a voltage drop, which can be used to control the flow of current.

The TSM950N10CW is widely used in many applications, such as switching, amplifying, and providing power to a load. It is a versatile device and can be used in various ways depending on the application. For example, it can be configured to act as a high-frequency amplifier for delivering power to receiver circuits or can be used as a low-frequency switcher for controlling the current flow of LEDs. It is also used in high-frequency power regulation applications, such as DC/DC converters.

The TSM950N10CW is a robust and reliable MOSFET which offers excellent electrical performance and thermal resistance. Its ability to provide high-current carrying and low-voltage drop make it an ideal choice for various power management applications. It can be used as a high-frequency amplifier or a low-frequency switcher, depending on the application requirements.

The specific data is subject to PDF, and the above content is for reference

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