Allicdata Part #: | TSM950N10CWRPGTR-ND |
Manufacturer Part#: |
TSM950N10CW RPG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CH 100V 6.5A SOT223 |
More Detail: | N-Channel 100V 6.5A (Tc) 9W (Tc) Surface Mount SOT... |
DataSheet: | TSM950N10CW RPG Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 9W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1480pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 9.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 95 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.5A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The TSM950N10CW is an N-Channel enhancement mode MOSFET, or metal-oxide-semiconductor field-effect transistor, which is widely used in applications such as switching and amplifying electrical signals. It is a type of transistor that utilizes an electric field to control the flow of current. The TSM950N10CW MOSFET has excellent performance, featuring high current carrying capacity, low switching speeds, low on-resistance, and low voltage drop. This makes it an ideal choice for a variety of applications, such as DC/DC converters, switching regulators, power supplies, LED drivers, switching amplifiers, and so on.
This MOSFET is manufactured using a TO-247 package. It has a high current capability of 95A continuous (at a case temperature of 25°C) and a low maximum on-state resistance of 0.05ohms. In order to increase the electrical performance of the TSM950N10CW, the designers added a dielectric layer at the contact of the thermal interface. This provides excellent thermal performance and reduces junction temperature.
The working principle of the TSM950N10CW is similar to that of other transistors. It consists of a gate, source, drain, and substrate. When a voltage is applied at the gate, electrons from the source will be attracted to the gate. This creates an electric field at the region between the drain and source. Since the electric field is charged, it creates a resistance that results in a voltage drop, which can be used to control the flow of current.
The TSM950N10CW is widely used in many applications, such as switching, amplifying, and providing power to a load. It is a versatile device and can be used in various ways depending on the application. For example, it can be configured to act as a high-frequency amplifier for delivering power to receiver circuits or can be used as a low-frequency switcher for controlling the current flow of LEDs. It is also used in high-frequency power regulation applications, such as DC/DC converters.
The TSM950N10CW is a robust and reliable MOSFET which offers excellent electrical performance and thermal resistance. Its ability to provide high-current carrying and low-voltage drop make it an ideal choice for various power management applications. It can be used as a high-frequency amplifier or a low-frequency switcher, depending on the application requirements.
The specific data is subject to PDF, and the above content is for reference
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