| Allicdata Part #: | TSM9N90ECZC0G-ND |
| Manufacturer Part#: |
TSM9N90ECZ C0G |
| Price: | $ 2.14 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | MOSFET N-CHANNEL 900V 9A TO220 |
| More Detail: | N-Channel 900V 9A (Tc) 89W (Tc) Through Hole TO-22... |
| DataSheet: |  TSM9N90ECZ C0G Datasheet/PDF |
| Quantity: | 976 |
| 1 +: | $ 1.94040 |
| 10 +: | $ 1.75266 |
| 100 +: | $ 1.40843 |
| 500 +: | $ 1.09544 |
| 1000 +: | $ 0.90766 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 89W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2470pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 4.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
| Drain to Source Voltage (Vdss): | 900V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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The TSM9N90ECZ C0G is a n-channel enhancement-mode MOSFET transistor featuring low drain-source on-resistance, low gate-source voltage and high reliability of operation. It is typically employed for use in applications such as DC/DC converters, battery management, load switches, BLDC motor controllers, and power supplies. Its wide range of features, compact size, and minimal power dissipation make this particular MOSFET an attractive choice for consumer electronics, telecommunications and automotive applications.Application Fields
This particular device is a great fit for applications that make use of low-current DC switching and high-speed switching. It works well in systems which require low static power dissipation and high-temperature stability. Many consumer electronic systems such as audio amplifiers, television sets and computers commonly use this MOSFET transistor. The TSM9N90ECZ C0G has a number of automotive-related applications as well. These include fan drivers, windscreen wiper motors and engine control circuit applications. It also sees frequent use in motor controllers and power distribution systems. Other potential applications for this particular MOSFET include audio signal switching, battery related sensing, and pulse width modulation (PWM) signal generation.Working Principle
The TSM9N90ECZ C0G belongs to a class of MOSFET transistors known as enhancement-mode MOSFETs. This particular MOSFET uses a gate voltage to increase the conductivity of a channel from its source to drain terminals. In order to turn on the MOSFET, a positive voltage is applied to the gate terminal. This voltage is known as the gate-source voltage (VGS). This voltage creates an electrostatic field, known as an electric field, that increases the conductivity of the channel between the source and drain terminals. When the channel is turned on, current can pass through the MOSFET. To turn the MOSFET off, the gate-source voltage is decreased to zero. This eliminates the electric field, thus turning off the channel between the source and drain terminals, preventing any current to pass through it. The TSM9N90ECZ C0G is designed to have a low drain-source on-resistance, so that when it is turned on, the electric current flows at a low resistance and minimal loss. Additionally, the gate-source voltage for this MOSFET is designed to be low. This helps ensure that the power dissipation of the transistor does not increase unnecessarily.Conclusion
Overall, the TSM9N90ECZ C0G is an excellent choice for applications involving low-current DC and high-speed switching. It is also suitable for systems that require low static power dissipation and high-temperature stability. Applications such as consumer electronic systems, automotive equipment, and audio signal switching make frequent use of this particular MOSFET. Furthermore, its working principle is based on a low gate-source voltage and low on-resistance, which limits the power dissipation of the device.The specific data is subject to PDF, and the above content is for reference
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