TSM9435CS RLG Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOP
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	5.3W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	551.57pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	27nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	60 mOhm @ 5.3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	5.3A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

TSM9435CS RLG is part of an advanced family of semiconductor products for Triple-Gate MOSFETs. This product family combines field-effect transistor (FET) technology with high-performance digital and analog integrated circuit design techniques for fast switching, ultra-high-drive, and a very low on-resistance. It is especially suitable for a wide range of applications. This RLG TSM9435CS is a single-gate MOSFET.

Application Field of TSM9435CS RLG

The TSM9435CS RLG is designed to provide a low-power, low-voltage solution to a wide range of applications. It is suitable for switching and gain control in a variety of analog and digital systems. The device can be employed in motor control, telecommunications, instrumentation, automation, and medical applications, where low power and low voltage are essential. It can also be used in computing, disk drives, and other high-speed systems, where high-bandwidth transmission is necessary. In addition, the product can be applied in audio systems, where low-noise operation is required.

Working Principles of TSM9435CS RLG

The basic principle of operation for the TSM9435CS RLG is based on a three-terminal MOS transistor. It uses two gates, the source and the drain, where current flows from one gate to the other. The voltage drop between the two gates is known as the gate-source voltage (Vgs). This voltage ensures that the drain current is flowing in the desired direction. The on-resistance (Ron) is a key performance parameter of the TSM9435CS RLG. The Ron of the device is proportional to its gate-source voltage. Thus, less gate-source voltage results in a lower Ron. The lower Ron allows the same output current to be achieved with less power consumption, making the device an ideal choice for battery-powered applications.The higher the gate-source voltage the higher the off-state resistance (Roff). This is important in applications where switching is needed and the device must draw very little current in the off-state.The device is also designed to handle large currents. It has an internal, high-current capacity and can handle up to 30 amps (IDA). This makes it an ideal choice for high-current applications, such as motor control, lighting, and heating.Finally, the TSM9435CS RLG also has an optimized switching performance and is particularly well-suited for high-temperature operation. This means that it can operate at high temperatures without affecting its reliability and performance.

Conclusion

The TSM9435CS RLG is a single-gate MOSFET that provides low-power and low-voltage solutions for a wide range of applications. It uses a three-terminal MOS transistor with two gates and provides an optimized switching performance as well as high-current capacity. Its gate-source voltage ensures that the drain current is flowing in the desired direction, and its low Ron allows for less power consumption. Finally, the device is particularly well-suited for high-temperature operation, making it an ideal choice for a variety of analog and digital systems.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description