TZM5241C-GS08 Allicdata Electronics
Allicdata Part #:

TZM5241C-GS08-ND

Manufacturer Part#:

TZM5241C-GS08

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 11V 500MW SOD80
More Detail: Zener Diode 11V 500mW ±2% Surface Mount SOD-80
DataSheet: TZM5241C-GS08 datasheetTZM5241C-GS08 Datasheet/PDF
Quantity: 1000
12500 +: $ 0.02249
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 11V
Tolerance: ±2%
Power - Max: 500mW
Impedance (Max) (Zzt): 22 Ohms
Current - Reverse Leakage @ Vr: 2µA @ 8.4V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80
Description

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TZM5241C-GS08 is a single Zener diode specifically designed for Electronic Load Switching applications. This particular part features a wide breakdown voltage range, allowing it to be used in a wide range of applications, such as in High Power Relays and Fast Error Detection Circuits. The diode also features a fast turn-on and low leakage current, making it an ideal choice for high power and high speed applications.

A Zener diode is a type of diode that is designed to allow current to flow easily in only one direction (forward-biased). When reverse biased, the Zener diode allows current to flow in the opposite direction, thus creating a Zener effect. The Zener diode, when reverse biased, is placed in a region where the electric field is strong enough to cause the electrons to be accelerated until they reach a high level, where they become trapped and form what is known as a “Zener Breakdown”. This breakdown is manifested in a higher forward voltage across the diode, allowing current to flow on the reverse biased direction.

The TZM5241C-GS08 diode is designed to operate in the "Zener Breakdown" region. It features a wide range of breakdown voltages, ranging from 1.7 V to 75 V, and it is designed to withstand power dissipation up to 50 watts. This wide range of breakdown voltages ensures that the TZM5241C-GS08 can be used in applications that require higher power. Additionally, the diode features a fast turn-on time (less than 1 nanosecond), making it suitable for high power and high speed applications.

The TZM5241C-GS08 diode is also designed with a low leakage current, making it ideal for applications requiring low power consumption. Moreover, its low leakage current prevents the occurrence of false pulses, reducing the need for unnecessary power consumption. The diode also features a low forward voltage rating, which ensures that the current flowing through the diode does not exceed its maximum capacity.

The TZM5241C-GS08 diode is a widely used part in Electronic Load Switching applications because of its wide breakdown voltage range and low power consumption. It is also used in High Power Relays and Fast Error Detection Circuits because of its fast turn-on time and low leakage current. Finally, the low forward voltage rating makes it suitable for use in applications requiring low power consumption.

The specific data is subject to PDF, and the above content is for reference

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