TZM5262C-GS18

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A diode, in its most basic form, is a two-terminal electronic component that acts as a one-way gate for electric current, directing it in only one direction. In a diode, one terminal is the anode, while the other is the cathode. Diodes are found in a wide range of applications, including as rectifiers for converting AC to DC, and in switching and clipping circuits.

Within the family of diodes, Zener diodes are specifically designed to operate in the breakdown region. When a Zener diode is subjected to a reverse voltage, carriers will move from the n-type to the p-type region and cause a special kind of breakdown known as Zener breakdown. The maximum reverse voltage that a Zener diode can endure without experiencing a breakdown event is known as its Zener voltage.

Single Zener diodes are used primarily for voltage regulation. The TZM5262C-GS18 is a single Zener diode manufactured by Toshiba. This diode is available in a variety of packages, including the 2-pin SOD-323 package. It features a maximum peak reverse voltage of 18V, making it a good choice for regulating voltages within that range.

Typical applications of the TZM5262C-GS18 Zener diode include battery-powered equipment, communications equipment, test equipment, and digital circuits. More specifically, it can be used in voltage-stabilizing circuits, circuit overvoltage protection, and reference-voltage circuits in various industries.

The working principle of the TZM5262C-GS18 can be explained using the following figure.

In the forward bias state, the diode will operate by allowing current to flow from the anode to the cathode when a forward voltage (Vf) is applied across the terminals. In a reverse bias state, current will be blocked until the breakdown voltage (Vz) is reached, at which point current will flow freely through the device.

The breakdown voltage, or Zener voltage (Vz) of the TZM5262C-GS18 is specified as 18V. Therefore, when the reverse voltage applied across the diode exceeds 18V, a breakdown event will occur and it will start conducting current.

The breakdown voltage of the TZM5262C-GS18 is temperature-dependent. With every increase in temperature, the breakdown voltage decreases. This is due to the fact that as the temperature increases, the band gap of the diode decreases and the breakdown voltage decreases as a result.

Under normal operating conditions, the TZM5262C-GS18 diode will be in a reverse bias state. When the voltage applied across the diode exceeds the breakdown voltage of 18V, the diode will be forced into the avalanche breakdown region. In this region, the diode will be able to conduct large currents and limit the voltage across itself to the breakdown voltage. This is how the TZM5262C-GS18 is used for voltage regulation in applications such as battery chargers and power supplies.

The TZM5262C-GS18 is a reliable and economical voltage regulator diode. It offers an operating temperature range from -40°C to 100°C and its maximum breakdown voltage is 18V. This diode is most commonly used in circuits where it is necessary to keep the output voltage stable, such as for overvoltage protection and reference voltage circuits. It can also be used for boosting the reliability of charging circuits.

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