Allicdata Part #: | TZQ5260B-GS08-ND |
Manufacturer Part#: |
TZQ5260B-GS08 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 43V 500MW SOD80 |
More Detail: | Zener Diode 43V 500mW ±5% Surface Mount SOD-80 Qua... |
DataSheet: | TZQ5260B-GS08 Datasheet/PDF |
Quantity: | 1000 |
12500 +: | $ 0.01852 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 43V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 93 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 33V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | SOD-80 Variant |
Supplier Device Package: | SOD-80 QuadroMELF |
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Diodes are widely used in electronics and are responsible for the transfer and regulation of current in a variety of circuits. Of these diode types, zener diodes are among the most renowned. Zener diodes are different from regular diodes in that they are designed to regulate and sustain a certain voltage, as opposed to allowing current to flow in one direction only. The TZQ5260B-GS08 is a single zener diode that is designed to provide stable current control, reverse bias and overvoltage protection.
The TZQ5260B-GS08 is a voltage-regulated diode designed to provide a reliably consistent voltage output. It is a surface mount package with a Zener voltage specification of 2.6 V and a maximum power consumption of 500 mW. The maximum reverse voltage of 5 V and the limits of working temperature from -55 °C to +150 °C make the TZQ5260B-GS08 appropriate for a range of operating conditions. The diode\'s ability to manage multiple Input/Output voltages makes it a reliable choice in product design for power control, reverse bias protection and overvoltage protection.
The working principle of the TZQ5260B-GS08 is based on the fact that the diode is a semiconductor material with a very small resistance to current flow when the applied voltage is low. When a voltage above the ‘breakdown voltage’ of the diode is applied, the resistance of the diode rapidly increases - blocking further current flow. This breakdown voltage is controlled at the design level of the circuit and is where the function of the Zener diode can be seen. The diode allows current to pass when the applied voltage is lower than the specified breakdown value and prevents the current from passing when a higher voltage is applied.
The application area of the TZQ5260B-GS08 revolves around its capacity to control the current, which can vary depending on the purpose and design. For example, circuits that are designed to operate in conditions of high voltage or excessive current can be protected with the help of a Zener diode. Because of its high reverse breakdown voltage capabilities, the TZQ5260B-GS08 can also be employed in low-side current sensing applications, as a voltage regulator, and for overcurrent/overvoltage protection.
The TZQ5260B-GS08 is a single Zener diode that can be used to control the current and provide protection in a variety of situations. It can also be employed in power control, reverse bias protection and overvoltage protection due to its ability to manage multiple Input/Output voltages and high reverse breakdown voltage specifications. Furthermore, its design allows for reliable current control, and protection from excessive current and voltage. Because of these features the TZQ5260B-GS08 is a preferred choice for electronic design.
The specific data is subject to PDF, and the above content is for reference
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