Allicdata Part #: | TZQ5246B-GS08-ND |
Manufacturer Part#: |
TZQ5246B-GS08 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 16V 500MW SOD80 |
More Detail: | Zener Diode 16V 500mW ±5% Surface Mount SOD-80 Qua... |
DataSheet: | TZQ5246B-GS08 Datasheet/PDF |
Quantity: | 1000 |
12500 +: | $ 0.01852 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 16V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 17 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 12V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | SOD-80 Variant |
Supplier Device Package: | SOD-80 QuadroMELF |
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Diodes - Zener - Single
TZQ5246B-GS08 is a Zener single diode type with a maximum of 5.6V and a maximum of 4.6V repetitive reverse peak voltage (VRRM). TZQ5246B-GS08 is a type of diode which operates based on Zener Breakdown. It is designed for applications which require reliable and efficient noise suppression and clamping in AC systems.
The application field of TZQ5246B-GS08 is mostly related to AC systems. One of the primary applications of the device is in AC mains, where it is used to protect sensitive circuits from high-voltage spikes that may occur in the system. This type of diode can also be used to create a voltage-clamping circuit in order to induce a certain level of overvoltage protection in a system. Aside from that, it is also used in high-frequency voltage detection, pulse waveform shaping and waveform snubbing.
The working principle of TZQ5246B-GS08 lies in the Zener Breakdown phenomena. Zener Breakdown is a phenomenon observed in heavily doped junction semiconductors, where the reverse breakdown occurs at a much lower voltage than expected. This low breakdown voltage causes the current to flow in the reverse direction. In other words, the diode’s impedance at this particular point is zero.
When a voltage higher than the breakdown voltage is reached, the diode’s action changes from its normal blocking operation to that of a low resistance path for reverse current. This reverse current is regarded as Zener current. The Zener current flowing through the diode triggers the Zener breakdown on the dopant portion of the p-n junction.
By tuning the Zener voltage according to the system’s requirement, it is possible to precisely control the voltage at which the diode triggers its reverse breakdown. This is where the TZQ5246B-GS08 comes in: it is optimized so that its breakdown voltage is adjusted accordingly to meet the requirements of the system.
More specifically, the Zener breakdown effect of TZQ5246B-GS08 is used to protect sensitive electrical components by quickly clamping the voltage to a safe value when an overvoltage event occurs. In the event of an overvoltage, the diode triggers its Zener breakdown and begins conduct the reverse current. The current then passes through the diode, stabilizing the voltage level while reducing the effects of the overvoltage event.
The TZQ5246B-GS08 is also capable of dissipating a high amount of power when the voltage exceeds its breakdown voltage. When used in AC systems, the diode works to reduce the EMI and effectively clamps the voltage in order to protect sensitive components from excessive power surges.
In summary, TZQ5246B-GS08 is a type of Zener single diode designed for applications which require reliable and efficient noise suppression and voltage clamping. Its breakdown voltage is optimized for AC systems, making it ideal for protection against overvoltage events and other power surges.
The specific data is subject to PDF, and the above content is for reference
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