TZQ5267B-GS08

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Diodes are used extensively in electronic circuits to regulate the flow of electrical current. The TZQ5267B-GS08 Diode is a high-performance Zener Single Diode, a type of rectifier used to regulate the flow of current across an electrical circuit. It is commonly used to produce voltage references, voltage clamps, over-voltage protection, and to power voltage regulator circuits.

In semiconductor materials, when the electric current is carried by electrons instead of positive charges, the positive charge is said to be semiconductor. Zener diodes are a type of diode that is optimally designed to operate in the breakdown region as reliable rectifying device. The TZQ5267B-GS08 Diode is designed to operate in this breakdown region and is capable of handling currents up to several hundred milliamps.

The working principle of the TZQ5267B-GS08 Diode is based on a p-n junction diode, which is made up of two layers of semiconductor material – one highly doped p-type material and the other heavily doped n-type material. The two layers are separated but connected by a junction, through which a current will flow if an external voltage is applied. The flow of current is limited by the p-n junction, however, as the current flow increases the potential barrier falls and a volt-ampere curve is produced. When the applied voltage reaches the reverse breakdown voltage, a large current will flow.

The TZQ5267B-GS08 Diode can be used in a wide range of applications such as voltage reference circuits, voltage regulation, over-voltage protection, and current limiting. It can be used as an energy-saving feature to reduce energy consumption in electronic devices. It can also be used in circuits which require very precise voltage regulation and is extremely reliable in high-voltage applications.

The TZQ5267B-GS08 Diode is an efficient, reliable and cost-effective device, making it an ideal choice for various applications. It is designed to operate in the breakdown region of p-n junction diodes and is capable of handling high current while providing consistent performance. Furthermore, it is also efficient in high voltage applications, providing greater reliability and a longer life span.

The specific data is subject to PDF, and the above content is for reference