
Allicdata Part #: | UCC3808ADTR-2G4-ND |
Manufacturer Part#: |
UCC3808ADTR-2G4 |
Price: | $ 1.20 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Texas Instruments |
Short Description: | IC REG CTRLR PUSH-PULL 8SOIC |
More Detail: | Push-Pull Regulator Positive Output Step-Up/Step-D... |
DataSheet: | ![]() |
Quantity: | 1000 |
2500 +: | $ 1.08927 |
Frequency - Switching: | 194kHz |
Base Part Number: | UCC3808A-2 |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Operating Temperature: | 0°C ~ 70°C (TA) |
Control Features: | Frequency Control |
Serial Interfaces: | -- |
Clock Sync: | No |
Synchronous Rectifier: | No |
Duty Cycle (Max): | 49% |
Series: | -- |
Voltage - Supply (Vcc/Vdd): | 4.1 V ~ 15 V |
Output Phases: | 1 |
Number of Outputs: | 2 |
Topology: | Push-Pull |
Output Configuration: | Positive |
Function: | Step-Up/Step-Down |
Output Type: | Transistor Driver |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The UCC3808ADTR-2G4 is a high-speed MOSFET gate driver integrated circuit (IC) specifically designed to control high-side and low-side N-channel MOSFETs in DC/DC converter applications such as battery chargers and switched mode power supplies. It uses transformers to isolate the low-voltage input signals from the high-side and low-side MOSFETs, providing a degree of electrical isolation for safety purposes and increased system stability.
This IC is well-suited for applications in the automotive, industrial, and consumer sectors, as well as in commercial and military/aerospace applications. It can direct and drive MOSFETs operating from ∆V from 0V to 100V, and can handle peak currents up to 5A.
Its design takes into account mounting-related issues such as thermal performance and stability, thanks to its proprietary IC process optimized for thermal performance. Therefore, the device can operate over a wider temperature range, delivering improved performance and reliability.
This device features a wide range of features, setting it apart from its competitors. Its output drivers are capable of two-way bidirectional communication, allowing it to be used in high-speed applications such as real-time power management, and its inbuilt back-EMF protection enables it to perform safely in wide input voltage ranges. Additionally, its small size and low power consumption enable it to be used in space-constrained applications such as mobile phones and tablet PCs.
The UCC3808ADTR-2G4 is based on the double-edge triggered technique for improving the overall system efficiency. A signal is generated on both rising and falling edges of the input signal, reducing switching losses and enabling much faster response times than conventional methods. Additionally, the integrated buck and boost modes enable it to be used in a wide range of applications, from battery powered to AC mains applications.
The UCC3808ADTR-2G4’s signal passed on to the two MOSFETs provided adequate current drive while also protecting them from possible signal degradation due to additional circuit board electrical noise. The signal is also passed through a filter circuit, removing any clock feed-through and device noise, further improving signal integrity. These features, combined with the lack of external biases and the reduced number of components, result in minimal power dissipation and low EMI.
The UCC3808ADTR-2G4 is fully protected against overloads and over-temperature conditions. It monitors the current in the gate and limits it to a safe level, preventing any catastrophic damage to the MOSFETs. In addition, its internal temperature is constantly monitored, and any temperature increase above a certain limit will shut down the device to prevent thermal runaway.
These and other features make the UCC3808ADTR-2G4 a valuable solution for a wide variety of applications, especially those where a stable output voltage is required and high efficiency is desirable. This device also offers a number of advantages, such as reduced system size and cost, improved response time and efficiency, and minimal power dissipation.
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