ULQ2001D1013TR Allicdata Electronics

ULQ2001D1013TR Discrete Semiconductor Products

Allicdata Part #:

497-4989-2-ND

Manufacturer Part#:

ULQ2001D1013TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS 7NPN DARL 50V 0.5A 16SO
More Detail: Bipolar (BJT) Transistor Array 7 NPN Darlington 50...
DataSheet: ULQ2001D1013TR datasheetULQ2001D1013TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 7 NPN Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
Power - Max: --
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SO
Base Part Number: ULQ2001
Description

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The ULQ2001D1013TR is an integrated transistor array designed primarily for linear, analog, and digital signal applications. It is an NPN array, with the design at a monolithic level and providing multiple transistors in a single package. The ULQ2001D1013TR provides improved linear, digital, and analog signal performance, making it an ideal component for applications such as analog-mixed signal processing, signal boosting, data acquisition, and digital/analog signaling.

Application Field

The ULQ2001D1013TR NPN transistor array is used in various applications from communication receivers, mobile communication systems, and interfacing to analog-to-digital or digital-to-analog converters, among other applications. It can also be used in the DSP, A/D and D/A circuits, and the power amplifier/buffer circuitry in electronic devices. Furthermore, it is also applicable in applications such as high-frequency circuits, industrial automation control circuits, and automotive systems.

Working Principle

The ULQ2001D1013TR transistor array works by controlling the flow of current through emitter-base junctions and by controlling the current gain of each transistor in the array. When voltage is applied to the base electrodes of the transistors, the base current combines with the collector current to create a current gain, which is defined by the current amplification factor (β). This beta value can be varied by adjusting the base-emitter voltage, which in turn changes the current gain of each transistor in the array.

The current gain in each transistor can further be increased by increasing the collector-emitter voltage. By connecting the collector-emmitter junction with other components, such as resistors or capacitors, the current gain can be adjusted by controlling the combined resistances or capacitances. This allows for increased control over the current gain in each transistor.

The ULQ2001D1013TR is also capable of providing a base current limit of up to several watts per transistor, and can be configured with dual collectors, enabling the transistor array to be used in high-current applications. In addition, the ULQ2001D1013TR features a DC current gain of up to 400 and a low noise figure, making it ideal for high-performance analog and digital applications.

The ULQ2001D1013TR also features reverse voltage protection and internal ESD protection, allowing for multiple transistors in a single package with better current performance and protection from power surges and other environmental factors. Additionally, the ULQ2001D1013TR has an operating temperature range from -40°C to +85°C, making it suitable for use in thermally demanding applications.

Conclusion

The ULQ2001D1013TR is a versatile and powerful NPN transistor array that offers improved linear, digital, and analog signal performance. It is suitable for use in communication receivers, mobile communication systems, interfacing to analog-to-digital or digital-to-analog converters, and other applications. With its ability to provide a base current limit of up to several watts per transistor and its ability to be configured with dual collectors, the ULQ2001D1013TR is an ideal component for high-performance analog and digital applications. Additionally, the ULQ2001D1013TR provides reverse voltage protection and internal ESD protection, making it suitable for use in harsh environments.

The specific data is subject to PDF, and the above content is for reference

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