ULQ2003D1013TR Discrete Semiconductor Products |
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Allicdata Part #: | 497-2359-2-ND |
Manufacturer Part#: |
ULQ2003D1013TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS 7NPN DARL 50V 0.5A 16SO |
More Detail: | Bipolar (BJT) Transistor Array 7 NPN Darlington 50... |
DataSheet: | ULQ2003D1013TR Datasheet/PDF |
Quantity: | 17500 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 7 NPN Darlington |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 1.6V @ 500µA, 350mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 350mA, 2V |
Power - Max: | -- |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 16-SO |
Base Part Number: | ULQ2003 |
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The ULQ2003D1013TR is a type of bipolar junction transistor (BJT) array. It is widely used in the application fields of PWM controllers, H-bridge drivers, and inverters.
A bipolar junction transistor array is composed of a number of interlinked transistors connected in a certain formation. It has two basic configurations: an NPN array and a PNP array. Both configurations consist of a number of transistors placed in parallel with each other. The circuit generally provides an array of NPN and PNP transistors, each with its own base, collector and emitter connections.
The ULQ2003D1013TR is a PNP bipolar junction transistor (BJT) array designed for use in H-bridge drivers and inverters. It offers low on-state resistance, high switching speed and a low maximum turn-on voltage. Its relatively low gate resistance helps reduce switching losses and increase efficiency.
The ULQ2003D1013TR has an operating voltage range of 7V to 18V, a saturation voltage of no more than 0.2V and a maximum collector current of 12A. It also has an isolation voltage rating of 1kV (VCEO). The isolation voltage rating ensures that the transistor can operate without capacitor-input coupling.
In terms of its working principle, the ULQ2003D1013TR works as follows: When a current is passed through the base of one of the transistors in the array, the base-collector voltage becomes 0.7V and the current flow continues to the collector and emitter. This current then flows through the emitter and then to the external circuit, thus providing a current gain. The gain of the circuit can be adjusted by varying the current passing through the base of each transistor.
The ULQ2003D1013TR is a versatile BJT array that can be used in a variety of different applications. It is particularly popular in H-bridge drivers and inverters where its low on-state resistance, high switching speed and low maximum turn-on voltage make it ideal for these applications. Its relatively low gate resistance helps reduce switching losses and increase efficiency.
In addition to its application in H-bridge drivers and inverters, the ULQ2003D1013TR can also be used in other circuits, such as PWM controllers, LED drivers and high frequency converters. Its robustness and good thermal performance make it a suitable choice for these types of applications. The ULQ2003D1013TR is also compatible with surface mount technology and is available in a variety of packages.
The specific data is subject to PDF, and the above content is for reference
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