VP0104N3-G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

VP0104N3-G is a type of insulated gate field-effect transistor (IGFET), a three-terminal device that provides voltage-controlled current amplification. It is distinguished from other IGFETs by its inverse operation, i.e. the device has two important states: an OFF state, wherein the transistor\'s collector-current (Ic) is very low or zero and the ON state, wherein the collector-current (Ic) increases with increasing gate-to-source voltage (Vgs).

The VP0104N3-G transistor is a commonly used device in a wide range of applications such as in power electronics and switching, amplifier, rectifier, and linear applications. It is also used for motor and servo control, automotive power management, vehicular noise control, voltage and current regulation, quick-acting control circuits for consumer and industrial systems, logic switching, and consumer and automotive audio systems.

The working principle of VP0104N3-G is based on the fact that when a gate-to-source voltage (Vgs) is applied, the transistor\'s drain-to-source current (Ids) increases proportionally to the applied gate-to-source voltage (Vgs). This allows the transistor to act as a switch, where current flows through the device when Vgs is in the ON state, and no current flows when Vgs is in the OFF state. Since it utilizses a voltage-controlled amplification process, VP0104N3-G is considered a voltage-mode device.

The output characteristic of the VP0104N3-G provides a linear region in which the current increases with increasing gate-to-source voltage (Vgs). This characterisitic is different from other IGFETs, such as the MOSFET, which offers a non-linear relation between the gate-to-source voltage (Vgs) and the drain-to-source current (Ids). Thus, the VP0104N3-G can be used to provide the necessary current control for many applications where a linear relation between control voltage and current is desired.

Due to its unique characteristics, the VP0104N3-G has made it possible to achieve high efficiency and fast switching performance in many applications. At the same time, the device\'s low on-resistance and low gate charge allow it to operate in power circuits with minimum power dissipation, thus enabling smaller and lighter electronic systems.

In summary, VP0104N3-G is a highly versatile insulated gate field-effect transistor, with applications that range from power electronics and switching to logic switching and voltage and current regulation. Its inverse mode operation and linear output characteristics make it an ideal choice for high-efficiency and fast switching applications. Due to its low on-resistance and low gate charge, the device is also capable of providing current control with minimal power dissipation, making it an attractive choice for many industrial and consumer applications.

The specific data is subject to PDF, and the above content is for reference