VP0808B-2

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction to VP0808B-2

VP0808B-2 is a single N-channel, enhancement-mode insulated gate field effect transistor (IGFET) with high-side enhancement structure. It has a wide range of applications and working principles.

Applications

The VP0808B-2 can be used in a variety of applications, such as high-side switches, power inverters, audio power amplifiers, motor control circuits, high-side voltage level regulation, and switching circuits. It has a very reliable and robust design, which makes it suitable for modern applications.

The VP0808B-2 is used in the high-side switch application to control current flows, due to its high output current capability. It can be used in audio power amplifiers for controlling the current and voltage levels. Additionally, it can be used in switch mode power supplies for switching primary and secondary components of the power supply. It can be used for motor control in industrial automation, as well as for regulating the voltage levels in high-side applications.

Working principle

The VP0808B-2 is a enhancement-mode transistor, with a gate-source voltage (Vgs) greater than the threshold voltage (Vts). When the gate voltage is greater than its threshold voltage, the channel between source and drain is opened, allowing electrons to pass through. This enables current to flow between the source and drain. This type of transistor is used in high-side applications, as the gate-source voltage is added to the source voltage Vss, resulting in a high-side voltage level.

The VP0808B-2 provides a high output current capability, which allows it to provide the necessary power levels for a variety of high-side applications. The Gate-Drain voltage (Vgd) is used to control the output current by controlling the channel between the drain and source. It can also be used for high-side current control in audio power amplifiers, allowing for efficient power consumption.

The device is available in two versions, with a breakdown voltage of 40V and a 230V, allowing for a wide range of applications. The device is also able to operate at high temperature conditions, up to 85°C. It is RoHS compliant, and can be used in a wide range of applications.

Conclusion

The VP0808B-2 is a single N channel IGFET, capable of providing high output current capabilities in a wide range of applications. It is available in two versions, with a breakdown voltage of 40V and 230V. The device is RoHS compliant and can operate in high temperature conditions. It can be used as a high-side switch, audio power amplifier, motor control, andfor high-side voltage level regulation and switching circuits.

The specific data is subject to PDF, and the above content is for reference