Allicdata Part #: | VP0808L-G-ND |
Manufacturer Part#: |
VP0808L-G |
Price: | $ 1.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET P-CH 80V 0.28A TO92-3 |
More Detail: | P-Channel 80V 280mA (Tj) 1W (Tc) Through Hole TO-9... |
DataSheet: | VP0808L-G Datasheet/PDF |
Quantity: | 284 |
1 +: | $ 0.92610 |
25 +: | $ 0.77213 |
100 +: | $ 0.70081 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80V |
Current - Continuous Drain (Id) @ 25°C: | 280mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 150pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-92-3 |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
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The VP0808L-G is an enhancement-type, n-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET), used to control the switching of electrical currents. A MOSFET is a type of field effect transistor (FET) chip that is used to control the flow of electricity through a circuit by regulating the voltage or current. It is a voltage-controlled device that can be used in many different applications, from power management to data transmission. The VP0808L-G is a single MOSFET, meaning that it contains only one terminal for controlling the flow of electricity.
The VP0808L-G is typically used to control the flow of current from a higher voltage and higher current source to a lower voltage and current load. Because of its small size and minimal impact on the switching speed of the circuit, the VP0808L-G is commonly used in applications that require fast switching times, such as switching power supplies, switching dc/dc converters, and pulse width modulators. It also has excellent heat dissipation characteristics and is ideal for use in circuits that generate a lot of heat.
To better understand the working principles of the VP0808L-G, it is important to first understand the basics of how FETs work. FETs are essentially a type of transistor that regulate the current flow through a circuit. FETs are made up of three terminals: a source, a drain, and a gate. The source supplies the electrical current to the circuit, and the drain is the circuit’s output. The gate controls the flow of current from the source to the drain by regulating the voltage, or potential difference, between source and drain.
The VP0808L-G is a particularly effective MOSFET because of its low on-resistance and high switching speed. Its on-resistance is the amount of resistance a FET presents when it is in the "on" state, which allows it to control the current flow more effectively. This is especially important when the circuit requires fast switching times, as the on-resistance directly affects the speed of current flow. The VP0808L-G also has a very high switching speed, which is necessary for applications such as power supplies and dc/dc converters.
In addition to its low on-resistance and high switching speed, the VP0808L-G also offers excellent thermal management characteristics. This is because the amount of heat generated by the FET is directly related to the amount of current flowing through the FET. The VP0808L-G\'s low on-resistance means that it has a lower amount of heat generated, resulting in improved thermal performance.
The VP0808L-G is a versatile, performance-efficient MOSFET that is used in various applications such as switching power supplies, switching dc/dc converters, and pulse width modulators. Its low on-resistance and high switching speed make it an ideal choice for applications that require fast switching times. Additionally, its excellent thermal management characteristics allow it to be used in circuits that generate a lot of heat without risk of overheating.
The specific data is subject to PDF, and the above content is for reference
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