Allicdata Part #: | VP0808B-E3-ND |
Manufacturer Part#: |
VP0808B-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 80V 0.88A TO-205 |
More Detail: | P-Channel 80V 880mA (Ta) 6.25W (Ta) Through Hole T... |
DataSheet: | VP0808B-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80V |
Current - Continuous Drain (Id) @ 25°C: | 880mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 150pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 6.25W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-39 |
Package / Case: | TO-205AD, TO-39-3 Metal Can |
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The VP0808B-E3 is a type of Field Effect Transistor (FET) which belongs to the family of single MOSFETs. It is a very versatile switching device that is widely used in a variety of electronic applications including motor control, power supplies, high-frequency switching and audio amplifiers. This article will discuss the application field and working principle of the VP0808B-E3.
The VP0808B-E3 is a N-Channel enhancement-mode FET. It is designed for low-resistive switching applications and has an on-resistance of 18-20mΩ and a maximum drain-source voltage rating of 30V. Its high switching speed and low thermal impedance makes it an ideal choice for a wide range of applications. Its package size is also relatively compact, making it a suitable choice for applications where space is an issue.
The VP0808B-E3 can be used in a variety of different applications. It is often used to switch electricity in motor control and power supplies. It is also widely used as a high-frequency switch in various audio equipment such as amplifiers and audio mixers. In addition, it is also used for low-level logic applications, providing solid operational stability and fast switching.
The working principle of the VP0808B-E3 is fairly simple and can be explained with a few key concepts. In a conventional N-channel MOSFET, an electric field is generated by applying a positive voltage (VGS) to the gate, which in turn causes the electrons in the channel to begin conducting.This reduces the resistance between the source and the drain allowing current to flow or switch it off depending on the voltage applied. The on-resistance of the VP0808B-E3 is low, making it a suitable choice for applications that require low-resistive switching.
The VP0808B-E3 is a reliable and versatile switching device that is well suited for a wide variety of applications. Its on-resistance and small form factor make it an ideal choice for motor control, power supplies, high-frequency switching and low-level logic applications. It is an excellent option for applications that require low-resistive switching and reliable operation.
The specific data is subject to PDF, and the above content is for reference
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