Allicdata Part #: | VRF141-ND |
Manufacturer Part#: |
VRF141 |
Price: | $ 35.71 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET RF PWR N-CH 28V 150W M174 |
More Detail: | RF Mosfet N-Channel 28V 250mA 30MHz 20dB 150W M174 |
DataSheet: | VRF141 Datasheet/PDF |
Quantity: | 22 |
1 +: | $ 32.46390 |
10 +: | $ 30.55690 |
25 +: | $ 28.64710 |
100 +: | $ 27.31020 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | N-Channel |
Frequency: | 30MHz |
Gain: | 20dB |
Voltage - Test: | 28V |
Current Rating: | 20A |
Noise Figure: | -- |
Current - Test: | 250mA |
Power - Output: | 150W |
Voltage - Rated: | 80V |
Package / Case: | M174 |
Supplier Device Package: | M174 |
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The VRF141 is a RF power amplifier field effect transistor (FET). This type of solid-state device is useful for amplifying radio frequency (RF) signals for a wide variety of applications, including the military, commercial, and personal communications systems.
The VRF141 is a very high power, high gain device with a maximum power output of 500 watts, making it suitable for use in high power applications. It is designed to operate in the frequency range of 1 to 500 MHz. The RF amplifier is capable of delivering more power than several other FET types, including the popular BF409 and BF538 FETs.The VRF141 is a two stage, common-source FET that functions by activating the drain voltage. The input signal is applied to the gate and the RF signal is amplified by the transistor\'s internal electron currents. The device features a high input impedance and a low output impedance for ideal signal transfer and amplification. The transistor has a low noise figure and is well suited for applications where low noise levels are desired.The VRF141 is also adept at providing high isolation between its input and output terminals. The high gate insulation of the transistor allows it to isolate the amplifier from noise and spurious signals that may be present in the transmission line. This allows for improved selectivity of the amplifier in rejecting signals outside the desired range.The maximum gain and power of the amplifier are determined by the size of the transistor and the amount of bias current applied to the gate. A larger transistor with more bias current increases the gain and power potential of the device. The amount of gain and power can also be adjusted by using different gate bias settings.The VRF141 amplifier is capable of providing stable gain and power over a wide range of frequencies and temperatures. Its high output power and linearity make it suitable for applications requiring high power, such as transmitter output stages, cellular telephone transmitters, and RF signal densification. The amplifier can also be used in broadband applications such as CATV, circuit protection, and high power amplifiers.The VRF141 is available in several package options, including TO-220, SOT-223, and DPAK packages. It is also available in surface-mount versions, allowing for easier integration into modern production systems. The VRF141 is a reliable, high performance RF power amplifier that is well suited for a wide range of applications. It is an economical and efficient choice for high power RF amplifiers, making it an excellent option for those seeking a powerful and reliable solution for their RF amplification needs.
The specific data is subject to PDF, and the above content is for reference
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