Allicdata Part #: | VRF161MP-ND |
Manufacturer Part#: |
VRF161MP |
Price: | $ 74.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | FET RF NCH 170V 30MHZ M174 |
More Detail: | RF Mosfet N-Channel 50V 250mA 30MHz 24dB 200W M174 |
DataSheet: | VRF161MP Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 67.31860 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | N-Channel |
Frequency: | 30MHz |
Gain: | 24dB |
Voltage - Test: | 50V |
Current Rating: | 20A |
Noise Figure: | -- |
Current - Test: | 250mA |
Power - Output: | 200W |
Voltage - Rated: | 170V |
Package / Case: | M174 |
Supplier Device Package: | M174 |
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Introducing the VRF161MP, a product of NXP Semiconductors. The NXP Semiconductors is a leading semiconductor company with a vast portfolio of products. The VRF161MP is one of many advanced and reliable solutions developed by the NXP Semiconductors.
The VRF161MP is a broadband MOSFET transistor. This high-performance device is designed to provide superior broadband power levels. It has a wide frequency range of 0.5 to 10GHz and offers excellent linearity, over an extremely wide voltage range. With its broad dynamic range, the VRF161MP is used in applications such as military, wireless, satellite, and consumer wireless application.
The VRF161MP also provides excellent impedance matching and gain flatness. Its optimized design makes it ideal for high linearity application development. Its high gains and linearity make it suitable for applications such as power amplifiers, phase shifters, and low-noise amplifiers.
The device\'s broadband capabilities make it suitable for applications utilizing high power levels for a broad frequency range. The large dynamic range helps improve the ability to maintain a match across a wide range of frequencies. It is ideal for applications such as wideband communications, radar, and automotive test and measurement.
The VRF161MP is made of a dual-gate structure composed of gallium arsenide (GaAs). The layers are separated by an insulating dielectric material. The device has an interconnected source and drain electrode, which are connected by a single layer of GaAs. The gate is composed of two independent layers, one of which is isolated from the others by a very thin insulating layer.
The level of current that can be sourced from the VRF161MP depends on the amount of voltage applied. The current can be increased or decreased by altering the voltage level. The device is built to withstand signal changes over a wide temperature range. This makes it suitable for use in adverse environmental conditions.
The VRF161MP can be used in a number of different ways. It is available as a discrete device or in a number of packages, such as land grid array (LGA), flip-chip, and surface-mount devices. It is also possible to include the VRF161MP in a Multi-Chip Module (MCM), allowing for improved integration in high-frequency applications.
In conclusion, the VRF161MP is a reliable and advanced solution for high-power applications. Its broadband capabilities, high linearity, and large dynamic range make it ideal for a variety of applications. Its highly versatile design allows for integration into many types of packaged or discrete products. This makes the VRF161MP a key component for developing efficient and reliable systems and solutions.
The specific data is subject to PDF, and the above content is for reference
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