Allicdata Part #: | VRF152MP-ND |
Manufacturer Part#: |
VRF152MP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | RF MOSFET N-CHANNEL 50V M174 |
More Detail: | RF Mosfet N-Channel 50V 250mA 175MHz 14dB 150W M17... |
DataSheet: | VRF152MP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | N-Channel |
Frequency: | 175MHz |
Gain: | 14dB |
Voltage - Test: | 50V |
Current Rating: | 50µA |
Noise Figure: | -- |
Current - Test: | 250mA |
Power - Output: | 150W |
Voltage - Rated: | 130V |
Package / Case: | M174 |
Supplier Device Package: | M174 |
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The field of radio frequency (RF) has received considerable attention in recent years, with a growth in the number of devices that operate in this spectrum. RF devices have a wide range of applications, from communications to navigation to navigation aids and more. Among these devices, the VRF152MP is particularly useful in radio and wireless applications. This article will provide a basic overview of the device and its working principle.
The VRF152MP is a small and compact power FET (field effect transistor). It has an internal gate capacitance of about 0.4picofarads and is rated for a maximum drain current of 40mA. The device is designed for switching applications in the 10MHz to 200MHz frequency range, making it ideal for a number of radio frequency applications. It has a wide frequency response, low noise and excellent harmonic suppression capabilities.
The working principle of the VRF152MP is based on the principle of field-effect transistors (FETs). FETs are controlled by the electric field generated between the gate and the source. As current passes through the device, a voltage is created between the gate and the source. When this voltage reaches a certain threshold, it allows current to flow through the device in a very efficient manner. This is known as the saturation effect, and is the basis for the operation of FET devices.
The VRF152MP is a low power consumption device and has excellent reliability. It is a single-gated device, with an overall gate-to-drain breakdown voltage of 10 volts. The device has less than 0.5pf of total gate capacitance, making it suitable for high frequency applications. The device also has a low on-resistance of 1.5 ohms and a fast rise time of 6ns. The maximum rated drain-source voltage for the device is 50 volts.
The VRF152MP is ideal for a wide range of RF applications, such as switching and modulation, wireless or radio communications, direction finding and navigation aids, and many other applications. It is a high-performance device, offering excellent performance at high speed. The device also has a low power consumption and is capable of handling a wide range of frequencies. This makes it a good device to use in applications where efficiency and small size are important.
In conclusion, the VRF152MP is an excellent RF field-effect transistor, with a wide frequency response, low noise and excellent harmonic suppression capabilities. It is ideal for a range of radio frequency applications, due to its excellent performance, low power consumption and high reliability. This article has provided a basic overview of the device and its working principle, and is a useful starting point for any application.
The specific data is subject to PDF, and the above content is for reference
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