ZTX415STZ

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The ZTX 415STZ is a single bipolar transistor module. It is typically used for low-frequency power supply and high power switching applications. The ZTX 415STZ features low on-state voltage drop, low gate charge, high gain and low input impedance.

The ZTX 415STZ is a high power, low-frequency application transistor module. It is primarily used in power supply and switching applications. It features a high-energy density, high current capacity, low on-state voltage drop and low gate charge. Additionally, the ZTX 415STZ is resistant to thermal runaway and can handle high energy pulses.

The ZTX 415STZ has a maximum power dissipation of 40 W and an operating temperature range of -40C to +150C. It has a peak collector current of 0.125 A and a maximum collector-emitter voltage of 60 V. The ZTX 415STZ is also available in three different package types: TO-220, SO-220 and DO-221.

The ZTX 415STZ works on the principle of bipolar junction transistors (BJTs). It consists of three layers of semiconductor material, arranged as an n-type region between two p-type regions. The middle n-type region is known as the base. The two p-type regions are called emitter and collector. When an electric signal is applied to the base, current flows between the emitter and collector and a signal is amplified.

The ZTX 415STZ is mainly used in the low-frequency power supply, high power switching and other applications. Its low on-state voltage drop and low gate charge make it suitable for high frequency applications. It also offers high gain and low input impedance. In addition, it can handle high energy pulses and is resistant to thermal runaway.

The ZTX 415STZ is a highly reliable and efficient Bipolar Junction Transistor (BJT) module for low-frequency power supplies and high power switching applications. Its low on-state voltage drop, low gate charge, high gain, low input impedance and high energy pulses support in-rush of high energy make it a reliable solution for critical applications.

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