ZTX449STOB

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	1V @ 200mA, 2A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 500mA, 2V
Power - Max:	1W
Frequency - Transition:	150MHz
Operating Temperature:	-55°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	E-Line-3, Formed Leads
Supplier Device Package:	E-Line (TO-92 compatible)
Base Part Number:	ZTX449

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Introduction

ZTX449STOB is a one-stage bipolar transistors belonging to the Single family. It is used for a variety of applications, from basic signal amplification to complex switching. It is highly reliable, as evidenced by its long-term operation. The ZTX449STOB is advanced in design, providing a high degree of accuracy and reliability.

Application Field

The ZTX449STOB is most often used in commercial and industrial applications, such as in a variety of amplifiers and switching applications. Its wide range of available power and high gain makes it an ideal choice for low-current, high-gain applications. The ZTX449STOB is used in a variety of equipment, including audio and video amplifiers, radio and television receivers, industrial automation systems, automotive sound systems, and instrumentation.

Features/Advantages

The ZTX449STOB has several key features and advantages that make it an attractive choice for a variety of applications. It has a high transconductance and wide bandgap, meaning it is able to provide low-noise amplification over a wide frequency range. The ZTX449STOB also has a very low saturation voltage, meaning it is able to provide smooth switching. Additionally, it has a maximum collector-emitter breakdown voltage of 80V, making it suitable for applications requiring a high voltage rating.

Working Principle

The ZTX449STOB is a bipolar transistor, meaning it is formed from two layers of doped silicon and has two junctions: one base-emitter junction, and one base-collector junction. When the transistor is switched on, current flows from the emitter to the collector through the base. This forms a three-layer sandwich, known as the base-emitter-collector structure. When the base voltage is increased, the current increases, allowing more current to flow between the emitter and collector. This current amplification is the basic principle of a bipolar transistor.The ZTX449STOB also contains a reverse-biased diode, which is necessary for the device to function properly. This diode provides a protective layer for the transistor by preventing the base-emitter junction from being overstressed.

Conclusion

The ZTX449STOB is a reliable single-stage bipolar transistor that is used in a variety of amplifying and switching applications. Its wide bandgap, low saturation voltage, and high maximum collector-emitter breakdown voltage make it a suitable choice for a number of applications. Additionally, its reverse-biased diode prevents the base-emitter junction from being overstressed, thus ensuring its long-term reliability and performance. The ZTX449STOB is thus a versatile, reliable, and highly successful device.

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