ZTX449 Allicdata Electronics

ZTX449 Discrete Semiconductor Products

Allicdata Part #:

ZTX449-ND

Manufacturer Part#:

ZTX449

Price: $ 0.46
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 30V 1A E-LINE
More Detail: Bipolar (BJT) Transistor NPN 30V 1A 150MHz 1W Thro...
DataSheet: ZTX449 datasheetZTX449 Datasheet/PDF
Quantity: 2486
1 +: $ 0.41580
10 +: $ 0.36603
100 +: $ 0.28054
500 +: $ 0.22176
1000 +: $ 0.17741
Stock 2486Can Ship Immediately
$ 0.46
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Supplier Device Package: E-Line (TO-92 compatible)
Base Part Number: ZTX449
Description

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The ZTX449 Bipolar Junction Transistor (BJT) is a single, low-power semiconductor device that has been employed in a wide range of applications. With its sizable amplification capability and very low input signal requirements, it has been used for many signal-conditioning circuits that require a high degree of sensitivity and versatility. The ZTX449 can also be employed in low-frequency switching operations, allowing it to serve as an efficient high-speed switch in control and high-speed logic circuits.

The ZTX449 is constructed with two different types of semiconductor material joined together in two distinct regions, or layers, known as the emitter and collector regions of the transistor. A middle region, referred to as the base region, is present between these two in order to allow for current flow between the other two regions.

The operation of the ZTX449 transistor can be explained using the idea of minority carrier injection since it depends on the injection of minority carriers from the emitter into the base region. In a BJT, the emitter is always reverse-biased, meaning that it is connected to the most positive potential in the circuit. When an electric field is present between the base and emitter, it creates a field-effect and therefore causes the majority carriers in the emitter to be swept away, while generating a minority carrier in the same process.

These minority carriers enter the base region and create an avalanche effect in the base-collector junction and therefore inject a current within it, referred to as the base current. This current is passed onto the collector region, where the wider band gap of the semiconductor material results in a much higher voltage, which can be used to further amplify the base current and output larger currents.

This amplification process built into the ZTX449 transistor makes it ideal for many applications. By properly manipulating its input voltage and controlling the base current accordingly, it can act as an efficient switch for a variety of digital systems and can also be utilized in sensitive analog circuits. The ZTX449 can have a wide range of applications, ranging from low-frequency gain control circuits to driving high-current loads.

In addition, the ZTX449 has several important features that make it popular for a variety of applications. This includes its low power dissipation and its low saturation voltage, which makes it especially suitable for use in low-voltage applications. It is also capable of delivering high current volts so that it can be used as a high-speed switch. It is also able to carry a large amount of voltage to the collector region, allowing it to produce large output currents.

The ZTX449 Bipolar Junction Transistor is a simple, but powerful piece of technology that has been employed in many different applications. With its sizeable amplification capability, it is ideal for use in low-power analog and logic circuits, as well as high-frequency switching operations. It features a low input signal requirement and low power dissipation, making it especially suitable for low-voltage applications.

The specific data is subject to PDF, and the above content is for reference

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