ZTX458STOA

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The ZTX458STOA is a single NPN high voltage transistor, which is generally used for low-level audio and low-power, wide band RF applications. The device features an integrated diffusion source and drain zone structure, which significantly lowers its off-state leakage current and improves its performance in applications requiring higher speed and minimum power loss.

The ZTX458STOA is composed of two layers of P-type material formed between two N-type layers and contains two gate spaces or two gate-to-space inlets to provide the necessary connection between the source and the drain. The P-type material is held between the two N-type layers, and the gate-to-space inlets connect to the source and the drain. By applying an appropriate voltage to the gate-to-space inlet, the transistor will turn "on" and allow current to flow from the source to the drain.

The ZTX458STOA also contains an internal isolation structure and a thermal fuse which provides protection from excess heat. The thermal fuse will cut off power to the device when it exceeds a pre-determined temperature threshold, protecting the device from thermal damage. The internal isolation structure ensures that the transistor\'s base-emitter voltage is not affected by the device\'s drain-source voltage, allowing the device to operate with more stable and reliable performance.

The ZTX458STOA has a maximum collector current of 200mA and has a maximum collector-emitter voltage of 150V. The device has a very low on-state voltage drop, making it suitable for high-efficiency applications. Its low input capacitance and high switching speed make it ideal for use in low power amplifiers and wide band RF applications. Its high voltage withstand capability makes it suitable for applications requiring high voltage, such as in the automotive industry or any application which requires high voltage protection.

In summary, the ZTX458STOA is an NPN high voltage transistor designed for use in low-level audio and low-power, wide band RF applications. The device features a diffusion source and drain zone structure, an internal isolation structure, and a thermal fuse, which provides protection from excess heat. It has a maximum collector current of 200mA and has a maximum collector-emitter voltage of 150V. Its low input capacitance and high switching speed make it ideal for use in low power amplifiers and wide band RF applications, while its high voltage withstand capability makes it suitable for applications requiring high voltage protection.

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