ZTX696B Allicdata Electronics
Allicdata Part #:

ZTX696B-ND

Manufacturer Part#:

ZTX696B

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 180V 0.5A E-LINE
More Detail: Bipolar (BJT) Transistor NPN 180V 500mA 70MHz 1W T...
DataSheet: ZTX696B datasheetZTX696B Datasheet/PDF
Quantity: 4104
Stock 4104Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 180V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 200mA, 5V
Power - Max: 1W
Frequency - Transition: 70MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Supplier Device Package: E-Line (TO-92 compatible)
Base Part Number: ZTX696B
Description

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ZTX696B is a type of High Voltage, High Speed, Amplifier Transistor which belongs to the family of transistors known as Bipolar junction transistors (BJT) and is a single type, these transistors are used in a variety of electronic circuits and are mainly used to amplify or switch electronic signals and electrical power.

The ZTX696B is used in high voltage and high speed applications, it is suitable for use in the range of 60-400V depending on the type of application it is applied in. It is a general purpose amplifier or switch and can be used for audio, radio, laboratory or digital applications. ZTX696B has a moderate frequency range of 5MHz-30MHz and its power consumption is relatively low.

The Structure of the ZTX696B Transistor — The ZTX696B is designed to have three terminals, the collector (C), base (B) and emitter (E). The collector and emitter of this type of transistor are both doped with an N-type material and the base is doped with a P-type material. This allows the electrical current to flow between the collector and emitter, but not between the base and emitter. The base and emitter are connected to each other through a thin layer of silicon dioxide. As the current flows between the collector and emitter, the voltage drop across the base-emitter junction is the same as the collector current, this is known as the common emitter configuration.

ZTX696B Working Principle — The idea behind the working principle of the ZTX696B is that the current flows from the collector to the emitter when a voltage difference is applied between the collector and base. When the voltage difference is greater than 0.7 Volts, the base current begins to flow from the collector to the emitter. This allows the current to flow from the collector to the emitter and amplifies the signal or power between the collector and emitter.

Applications of ZTX696B — The ZTX696B is utilized in a variety of applications such as in audio amplifiers, guitar amplifiers, motor speed controllers, motor drive circuits and high voltage switching devices. It can be used in vacuum tube amplifiers as well because of its excellent performance in high frequency applications. It can also be used in video amplifiers and video applications because of its high gain and fast switching speeds. Furthermore, the ZTX696B can also be used in high power RF amplifiers.

To conclude, the ZTX696B is a high voltage, high speed amplifier or switch transistor which is used in a variety of applications. It has a moderate frequency range and low power consumption and is suitable for use in audio, radio, laboratory, digital and video applications. The three terminal structure and the working principle of the ZTX696B allows it to amplify the signal or power between the collector and emitter when a voltage difference is applied between the collector and the base. This makes it a reliable, efficient and cost-effective solution for amplifying or switching applications.

The specific data is subject to PDF, and the above content is for reference

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