ZTX601BSTZ Allicdata Electronics
Allicdata Part #:

ZTX601BSTZ-ND

Manufacturer Part#:

ZTX601BSTZ

Price: $ 0.29
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN DARL 160V 1A E-LINE
More Detail: Bipolar (BJT) Transistor NPN - Darlington 160V 1A ...
DataSheet: ZTX601BSTZ datasheetZTX601BSTZ Datasheet/PDF
Quantity: 1000
2000 +: $ 0.25516
Stock 1000Can Ship Immediately
$ 0.29
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 10mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 500mA, 10V
Power - Max: 1W
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)
Base Part Number: ZTX601
Description

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Transistors, notably Bipolar Junction Transistors (BJTs), are semiconductor devices capable of amplifying or switching electronic signals. There are several kinds of transistors, each suited to a different type of application. The ZTX601BSTZ is a single junction bipolar transistor, making it ideal for a variety of applications. This article will discuss the application field and working principle of this device.

Application Field

The ZTX601BSTZ is a PNP class transistor suitable for general-purpose applications. It has an operating temperature range of -65°C to 150°C, making it a versatile device for commercial and industrial electronics. The device is designed to offer very low noise operation and is suitable for use with logic-level signals. The maximum current is 800mA, and the maximum collector dissipation is 2W which is suitable for applications up to 20V in voltage and up to 4A in current.

This device is typically used in audio applications such as pre-amplifiers, radio receivers, power amplifiers, and instrumentation. Its low noise and saturation voltage features make it an excellent choice for low-power applications such as digital clocks, light dimmers and control electronics. The ZTX601BSTZ also has excellent frequency response characteristics, allowing it to be used in a wide range of applications, from low-frequency signals to high-frequency applications.

Working Principle

The ZTX601BSTZ is a bipolar NPN transistor, meaning it is made of two p- and n-type semiconductor layers sandwiching a connecting region called the base. When current is applied to the base, the transistor can be made to switch on or off, allowing it to act as a switch or an amplifier.

In the case of switching, when the input current is higher than a certain threshold (called the Base Emitter Voltage, or VBE), the transistor switches on and the output current increases. This can be used to switch other electronic devices, such as an LED, on or off. When the input current is below the VBE, the transistor switches off, and the output current decreases.

In the case of amplification, when the input current is above the VBE, the transistor switches on and current flows from the collector to the emitter. This increases the voltage of the output current, amplifying the incoming signal. This is useful for applications such as audio pre-amplifiers and power amplifiers.

The ZTX601BSTZ can also be used for other uses such as switching, protective circuits, signal inverters and voltage regulators. As the device can operate over a wide temperature range and has a low noise signal, it is an ideal choice for a variety of applications.

Conclusion

The ZTX601BSTZ is an excellent choice for a variety of general-purpose applications such as audio pre-amplifiers, power amplifiers and signal protective circuits. Its low noise and saturation voltage features make it suitable for a range of applications, and its wide operating temperature range makes it ideal for industrial applications. Its switching and amplifying capabilities make it a versatile transistor, capable of being used in many different scenarios.

The specific data is subject to PDF, and the above content is for reference

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