ZTX658STOB Allicdata Electronics
Allicdata Part #:

ZTX658STOB-ND

Manufacturer Part#:

ZTX658STOB

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 400V 0.5A E-LINE
More Detail: Bipolar (BJT) Transistor NPN 400V 500mA 50MHz 1W T...
DataSheet: ZTX658STOB datasheetZTX658STOB Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Power - Max: 1W
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)
Base Part Number: ZTX658
Description

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ZTX658STOB is a type of single bipolar junction transistor (BJT) which is designed for use in various applications in the radio frequency (RF) industry. It is a low-noise, high-gain device that is suitable for transistor amplifiers, RF switch circuits, and low-noise amplifier applications.The device is constructed with a standard two-pin package and three terminals, collector (C), emitter (E), and base (B). ZTX658STOB has a high current rating of 1 Amp and a voltage rating of 0.5 volts at 50 MHz.

The ZTX658STOB is designed for applications in the HF and VHF frequency range, up to 50 MHz. It has a low noise figure of 0.7 dB and a high gain of up to 7 dB at 50 MHz. The device also offers a high output power of up to 20 dBm. Additionally, it has a fast switching speed of 20 ns, making it ideal for use in RF switch circuits. The ZTX658STOB also offers a low turn-on voltage of 0.28 volts. This makes it suitable for use in low-noise amplifiers.

The working principle of the ZTX658STOB is based on the fact that a voltage applied between the collector and base will cause current to flow between the collector and emitter. This current causes the transistor to act as a small-signal amplifier. The voltage applied to the base also establishes a base-emitter voltage, which creates a collector-emitter voltage that is proportional to the base current. This collector-emitter voltage is then amplified, causing the transistor to act as an amplifier.

The ZTX658STOB is widely used in various applications in the radio frequency (RF) industry. It is used in low-noise amplifiers, RF switch circuits, and transistor amplifiers. It is also used in RF attenuators, frequency multipliers, and amplitude modulation circuits. Additionally, it is used in various analog modulation schemes, such as frequency division multiplexing (FDM) and frequency-modulation multiplexing (FM). Furthermore, it is used in power amplifiers, switching circuits, and integrated circuits.

The ZTX658STOB is a versatile device and is suitable for both commercial and industrial applications. It is easy to use, reliable, and cost-effective. It is available in a variety of packaging options, such as bare die, surface mount, and through-hole packages. Additionally, it is available in a RoHS compliant version.The ZTX658STOB is a great device for applications requiring high gain, low noise, and high current capabilities. With its versatile features, it is an ideal choice for applications in the radio frequency industry.

The specific data is subject to PDF, and the above content is for reference

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