Allicdata Part #: | ZTX689BSTOA-ND |
Manufacturer Part#: |
ZTX689BSTOA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 20V 3A E-LINE |
More Detail: | Bipolar (BJT) Transistor NPN 20V 3A 150MHz 1W Thro... |
DataSheet: | ZTX689BSTOA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 10mA, 2A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 400 @ 2A, 2V |
Power - Max: | 1W |
Frequency - Transition: | 150MHz |
Operating Temperature: | -55°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | E-Line-3, Formed Leads |
Supplier Device Package: | E-Line (TO-92 compatible) |
Base Part Number: | ZTX689B |
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Transistors are the backbone of modern electronics and are used in a myriad of applications, from amplifying and switching electronic signals to powering digital products. The ZTX689BSTOA is a type of transistor known as a Bipolar Junction Transistor, or BJT. This article will explain the application field and working principle of this type of transistor.
Application Field
The ZTX689BSTOA is a single BJT transistor, which means it is composed of only two p-type and two n-type semiconductor layers. It is often used in high-power switching applications, due to its high collector current rating of up to 10 Amp. As a result, the ZTX689BSTOA is commonly found in power supplies, amplifiers, auto-ranging power supplies and other audio equipment, as well as high-power applications such as motor control. It is also sometimes used in low voltage audio applications, such as musical instrument amplifiers.
Working Principle
At the heart of the ZTX689BSTOA\'s operation is the use of the base, collector and emitter junction regions. These regions are all made of n-type and p-type semiconductor materials connected together to create a circuit of three layers, which act together to control the current flow and voltage across the transistor. The base region is a very thin layer of p-type semiconductor material, often made from silicon, germanium or gallium arsenide. This type of material has a very low resistance to current, called the cut-off voltage, which allows the transistor to be used in very low-power applications. The collector region an n-type material is thicker than the base layer and has a higher resistance to current. The emitter region, located between the collector and base regions, is an n-type material and acts as the driving force for the current flowing through the circuit.The current flow starts when a voltage is applied to the base region, which creates a "base current". This current sets up an electric field between the collector and base regions, allowing holes to flow from the base region across to the collector. When the holes move across, they combine with the electrons in the collector region, creating a positive voltage at the emitter, which can be used to drive a current flow across the transistor. By carefully controlling the base current and the voltage across the collector and emitter junctions, the ZTX689BSTOA can be used to amplify and switch signals with great precision.
In conclusion, the ZTX689BSTOA is a single BJT transistor often used in high-power switching applications, due to its high collector current rating. Its operation is based on the use of the base, collector and emitter junctions, allowing precise control over the current flow and voltage across the transistor. As a result, the ZTX689BSTOA is an important component for a wide range of electronic applications.
The specific data is subject to PDF, and the above content is for reference
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