ZTX614STOB Allicdata Electronics
Allicdata Part #:

ZTX614STOB-ND

Manufacturer Part#:

ZTX614STOB

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN DARL 100V 0.8A E-LINE
More Detail: Bipolar (BJT) Transistor NPN - Darlington 100V 800...
DataSheet: ZTX614STOB datasheetZTX614STOB Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.25V @ 8mA, 800mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 500mA, 5V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)
Base Part Number: ZTX614
Description

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The ZTX614STOB is a high current, high voltage, PNP type bipolar junction transistor (BJT). This device is designed for applications where high switching speeds and low levels of power dissipation are required. It offers a low noise figure and excellent reverse recovery characteristics.

The ZTX614STOB is ideal for switching and amplification applications such as switch-mode power supplies, high-power audio amplifiers, and broadcast and television (B-T) channels. Its high frequency switching characteristics make it suitable for use in circuits requiring fast switching of high frequency signals.

The ZTX614STOB has a wide operating temperature range, allowing its use in high temperature environments. Its high collector current allows high power applications to be handled with ease. The device is available in a variety of package types, such as TO-220, DIP, and SOT89.

The working principle of the ZTX614STOB is based on the transfer of minority carriers from the emitter to the base. As the voltage applied to the base-emitter junction increases, the number of minority carrier electrons increases, resulting in an increase in current through the device. As the current reaches the transistor’s saturation limit, the collector-emitter voltage reaches its maximum value, resulting in the transistor being fully saturated.

The ZTX614STOB is also well suited for use in linear amplification applications. In this mode of operation, the base emitter voltage is held constant, while the base current is varied to control the collector current. This allows the user to achieve low distortion and low noise operations in a wide range of linear power applications.

The ZTX614STOB is also suited for a wide variety of other applications, such as high-voltage switching, audio transistors, low-noise transistors, and avalanche breakdown protection circuits. Due to its high current capabilities, it can also be used in high-power switching circuits, such as current sources and high-voltage regulated power supplies.

In conclusion, the ZTX614STOB is a versatile, high-performance bipolar junction transistor. Its high current and high voltage capabilities make it well-suited for a wide variety of applications. Its wide operating temperature range, excellent reverse recovery characteristics, and high switching speed make it an ideal choice for many high power, high speed switching and amplification applications.

The specific data is subject to PDF, and the above content is for reference

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