Allicdata Part #: | ZTX651STOB-ND |
Manufacturer Part#: |
ZTX651STOB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 60V 2A E-LINE |
More Detail: | Bipolar (BJT) Transistor NPN 60V 2A 175MHz 1W Thro... |
DataSheet: | ZTX651STOB Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | -- |
Power - Max: | 1W |
Frequency - Transition: | 175MHz |
Operating Temperature: | -55°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | E-Line-3, Formed Leads |
Supplier Device Package: | E-Line (TO-92 compatible) |
Base Part Number: | ZTX651 |
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The ZTX651STOB is a common NPN silicon planar epitaxial transistor that has found application in a variety of electronic circuits. It is a general purpose medium power amplifier and switch, operating at collector current of up to 1A and suitable for frequencies up to 300MHz. It is also commonly used in analog circuits and as a switch in low frequency applications.
The ZTX651STOB is constructed using a two layer base and two layer emitter structure, which reduces the base and emitter area, making them both small enough to fit the available packaging. The device also has a low sensitivity to parasitic capacitance, reducing any losses due to capacitive feedback. The transistor is capable of operating with a wide range of base biases and current gain that is highly dependant on the temperature and collector current.
The ZTX651STOB can be used in a variety of applications. These include audio amplifiers, pre-amplifiers, transistors switches, motor controllers, home appliances, telephones, car audio and signal amplification. It is also commonly used as a replacement for other transistors in electronic circuits.
The working principle of a ZTX651STOB is based on the principle of charge conduction. Electric charge flows between the emitter and collector when a base current is applied to the base-emitter junction. This behavior is known as bipolar junction transistor (BJT) action. The current gain, or hFE, is the ratio of collector current (Ic) to base current (Ib). This is an important parameter in designing an electronic circuit since higher values of hFE result in higher transistor gain, allowing for greater signal amplification.
The ZTX651STOB is a single bipolar junction transistor designed for a wide range of applications. Its compact size, low cost, and high current gain make it an ideal choice for audio and signal amplification, motor controllers, and various other applications.
The specific data is subject to PDF, and the above content is for reference
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