Allicdata Part #: | ZTX658STOA-ND |
Manufacturer Part#: |
ZTX658STOA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 400V 0.5A E-LINE |
More Detail: | Bipolar (BJT) Transistor NPN 400V 500mA 50MHz 1W T... |
DataSheet: | ZTX658STOA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 100mA, 5V |
Power - Max: | 1W |
Frequency - Transition: | 50MHz |
Operating Temperature: | -55°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | E-Line-3, Formed Leads |
Supplier Device Package: | E-Line (TO-92 compatible) |
Base Part Number: | ZTX658 |
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ZTX658STOA is a silicon epitaxial planar NPN-transistor. It is designed for use in low-frequency switching and amplifier applications. It is designed for use at collector currents up to 150 mA and has a very high gain and good stability at different emitter-collector voltages. The ZTX658STOA can be used in audio applications as well as other low-frequency applications.
The ZTX658STOA is a single bipolar junction transistor (BJT) with three terminals: the collector, base and emitter. The collector terminal collects the current from the base and flows it through the transistor. The base terminal is the control point of the transistor, controlling the current flow from collector to emitter. The emitter is the output of the transistor, producing the desired output current. The ZTX658STOA has a nominal gain of 65, which is determined by the ratio of Collector-Emitter resistance to Base-emitter resistance.
The ZTX658STOA is commonly used in low-frequency amplifier designs. It is able to achieve high gains over a wide range of frequencies and offers good linearity. The ZTX658STOA has a very high hFE of > 200 at rated collector current (IC), which allows it to switch from low to high speed very quickly. The high gain allows for more complex circuits to be constructed and higher signal levels to be attained.
In order for the ZTX658STOA to operate correctly, it needs to be properly configured. The ZTX658STOA needs to be powered with a DC voltage source, usually a 3–12V battery. The power supply must be chosen carefully in order to achieve the highest gain and best results. The base and emitter terminals of the transistor must also be biased to the same voltage in order to properly operate the device. This is usually done using a bias resistor and a bypass capacitor, which assist in bypassing the current through the transistor.
The ZTX658STOA has various characteristics that make it suitable for use in a wide range of applications. In linear audio applications, it has very low noise figure and low distortion, which make it suitable for low-level audio applications. It also has very low high-frequency roll off, so it can be used for applications where high frequency signals must be kept from being attenuated. In switching applications, it can be used in many design as it is able to switch quickly and accurately.
The ZTX658STOA is a versatile and reliable BJT that can be used in many types of applications. Its simple structure and high gain make it ideal for use in low-frequency amplifier and switching circuits. Its low noise figure and low distortion make it suitable for use in audio applications, while its high-frequency roll off prevents high-frequency signals from being attenuated. With the right configuration, the ZTX658STOA can be a highly reliable and useful transistor device.
The specific data is subject to PDF, and the above content is for reference
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