Allicdata Part #: | ZXMD63C03XTC-ND |
Manufacturer Part#: |
ZXMD63C03XTC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N/P-CH 30V 8MSOP |
More Detail: | Mosfet Array N and P-Channel 30V 1.04W Surface Mo... |
DataSheet: | ZXMD63C03XTC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | 135 mOhm @ 1.7A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 290pF @ 25V |
Power - Max: | 1.04W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Supplier Device Package: | 8-MSOP |
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Transistors, or \'transfer resistors\', are semiconductor devices that are used in a wide array of electronic circuits. FETs (Field-Effect Transistors) are one type of transistor that are particularly useful for switching applications. MOSFETs (Metal-Oxide Semiconductor Field-Effect Transistors) are a specific kind of FET which offer superior switching performance due to its insulation properties. This article discusses the application field and working principle of the particular MOSFET array known as the ZXMD63C03XTC.
Application Field
The ZXMD63C03XTC is a logic-level attenuation array designed to provide a buffer between high-speed logic signals entering and exiting devices. By designing the device with logic-level attenuation, users can easily match higher-speed logic from the input side to the output side, allowing for longer signal lengths in a variety of applications such as in automotive, computer, telecommunications, and industrial applications. Additionally, the device can be used to provide noise immunity or to reduce power dissipation.
The ZXMD63C03XTC is particularly well-suited for high-density applications, since the device is capable of achieving high levels of integration in a very small package size. The device provides a low power dissipation, allowing for more efficient power management in battery-powered devices. The device’s high switching speeds and low rise/fall times make it ideal for high-speed logic applications requiring efficient power management.Finally, the device’s high-noise immunity resulting from its insulation properties makes it an optimal choice for digital applications requiring noise reduction.
Working Principle
The ZXMD63C03XTC array is a type of MOSFET that utilizes an insulated gate between the source and drain (the conducting electrodes of the FET). This insulated gate allows current to flow through the device only when a voltage is applied to the gate. By controlling this voltage, the user can control the flow of electrons through the device, allowing for efficient switching between off and on states.
The most important aspect of the ZXMD63C03XTC array is its insulation properties. The insulated gate single-handedly prevents catastrophic electrical currents from flowing, allowing for a much higher degree of noise immunity. The device’s high switching speed also results from its insulation properties. By providing a short delay between applying a voltage to the gate and the current flowing through the device, the device can achieve very high switching speeds.
Conclusion
In conclusion, the ZXMD63C03XTC is a type of MOSFET array designed for high-density applications requiring high levels of integration while minimizing power dissipation. The device’s insulated gate allows for efficient switching performance and high noise immunity. The ZXMD63C03XTC array is suitable for automotive, computer, telecommunications, and industrial applications, as well as digital applications requiring noise reduction.
The specific data is subject to PDF, and the above content is for reference
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