ZXMD65P03N8TA Allicdata Electronics
Allicdata Part #:

ZXMD65P03N8CT-ND

Manufacturer Part#:

ZXMD65P03N8TA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET 2P-CH 30V 3.8A 8-SOIC
More Detail: Mosfet Array 2 P-Channel (Dual) 30V 3.8A 1.75W Sur...
DataSheet: ZXMD65P03N8TA datasheetZXMD65P03N8TA Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Base Part Number: ZXMD65P03
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: --
Power - Max: 1.75W
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 25.7nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Obsolete
Packaging: Cut Tape (CT) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The ZXMD65P03N8TA is a three-channel n-channel enhancement model field effect transistor array comprising a series of power MOSFETs. This model is a great choice for applications requiring high current capability and fast switching speeds, and offers a broad range of general-purpose power applications, including but not limited to switching, converters, motor controls, amplifiers, regulators, and load switches. The ZXMD65P03N8TA is highly suitable for automotive applications where quick and reliable power control is needed.

In terms of power performance, the ZXMD65P03N8TA features a maximum drain current rating of 18 A and a drain-source voltage rating of 65 V. The device also offers an optimal on-state resistance of 4.3 mΩ and a maximum voltage rating of 65 V. In contrast, the ZXMD65P03N8TA includes an optimized gate charge of 1.8 nC, an input capacitance of 230 pF, and a threshold voltage of 2.7 V. With these specs, the ZXMD65P03N8TA can stand up to a wide range of applications, most notably those involving high current and fast switching.

The working principle of the ZXMD65P03N8TA is based on the FET transistor array. The FET array works by providing a controlled path between the source and drain terminals. A single transistor in this type of array consists of a source, a drain, and a gate. When a suitable voltage is applied to the gate of the transistors, the conductivity between the source and drain terminals increases. This allows current to flow through the transistors and control the application.

The ZXMD65P03N8TA is ideal for a wide range of applications, including but not limited to: in power supplies, to provide surge protection, as motor control elements, to provide adjustable speed control, and more. This device is also used in automotive applications where quick and reliable performance is needed. The ZXMD65P03N8TA is well-suited for applications involving high current and fast switching.

In conclusion, the ZXMD65P03N8TA is a three-channel n-channel enhancement model field effect transistor array that is highly suitable for automotive applications where quick and reliable power control is needed. It offers a wide range of general-purpose power applications and is capable of providing high current and fast switching. It is also commonly used in power supplies, motor control elements, surge protection, and adjustable speed control applications.

The specific data is subject to PDF, and the above content is for reference

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