Allicdata Part #: | ZXMD63P02XTC-ND |
Manufacturer Part#: |
ZXMD63P02XTC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2P-CH 20V 8MSOP |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 1.04W Surface... |
DataSheet: | ZXMD63P02XTC Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | 270 mOhm @ 1.2A, 4.5V |
Vgs(th) (Max) @ Id: | 700mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: | 5.25nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 290pF @ 15V |
Power - Max: | 1.04W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Supplier Device Package: | 8-MSOP |
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The ZXMD63P02XTC is a voltage-controlled field effect transistor (FET) designed for use in high-performance integrated circuits and systems. It is part of the ZXMD6 series of FETs, which are optimized for use in a variety of applications, from audio and video to telecommunications, digital signal processing, and industrial automation. This particular FET is part of a larger package of transistors, which includes FETs, CMOS, and Bi-CMOS arrays.
The ZXMD63P02XTC can be used in a variety of applications, including amplifiers and power switching circuits. Its low on-resistance and high input impedance make it well-suited for driving high-power loads, such as motors or power LEDs. It is also suitable for use in automotive and industrial applications, such as gate drivers, power switches, and load switches. This FET can also be used as a low-cost solution for low-power, low-voltage applications.
The ZXMD63P02XTC works by applying a voltage across its gate, which causes the current flowing through the FET’s channel to be modulated. This modulation can be further controlled through the adjustment of the gate voltage. This modulation of the current flowing through the FET’s channel produces a varying output current from the FET, which can be used to control the varying loads connected to it. The current flowing through the FET’s channel can thus be used to switch devices on and off, or serve as an amplifier.
In addition to its performance, the ZXMD63P02XTC is also known for its low cost. The FET is produced using cost-effective technologies and is often found in cost-competitive products. The combination of cost, performance, and size make the FET suitable for many applications. Furthermore, its small size, low power consumption, and high-speed operation make it well-suited for use in small, portable, and energy-efficient devices.
Despite its wide range of applications, the ZXMD63P02XTC is not without its limitations. The FET’s power dissipation can be significant when operating at high frequencies, and its gate capacitance can be relatively high if not properly matched with the load impedance. Furthermore, its performance may degrade when operating at lower temperatures. Finally, the FET is not suitable for applications requiring high input impedances, such as certain analog integrated circuit design applications.
Overall, the ZXMD63P02XTC is an excellent choice for a wide range of applications. It offers inexpensive construction, excellent performance, and a variety of packaging options. With its wide range of applications, the ZXMD63P02XTC is a cost-effective solution for a variety of applications, from audio and video to communications and industrial automation.
The specific data is subject to PDF, and the above content is for reference
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