ZXMD65N02N8TA

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The ZXMD65N02N8TA is a power MOSFET array that is capable of providing high efficiency and reliable switching performance and meeting the needs of a wide range of applications. With the help of its high-current carrying capability and low on-resistance, ZXMD65N02N8TA improves the ambient temperature of the components and surrounding environment. It also ensures that the system is protected from any unwanted overload or heating.

The ZXMD65N02N8TA is designed with an integrated body-diode and dual drain-source port circuit. The body-diode functionality enables it to switch from high voltage to low voltage easily and with high efficiency. The dual drain-source port helps in providing an extra path for current to flow, ensuring extra protection from an accidental overload. With its dual structure, ZXMD65N02N8TA also helps in reducing the overall chip size, cost, and weight of the product.

In terms of application fields, ZXMD65N02N8TA can be used in systems involved in driving motors, fans, relays, antenna shields, motorized chairs, and HVAC systems. Additionally, it can also be used in robotics, power amplifiers, welding machines, solar inverters, and other power control systems. In terms of the working principle of the device, it essentially works similarly to other common power MOSFETs, with the added body-diode functionality.

The working principle of the ZXMD65N02N8TA involves using a high gate-source voltage to turn the device on and off. When the gate-source voltage is greater than the threshold voltage, electrons from the drain channel are driven into the source channel and the device is in its high-conductance "on" state. This results in it providing a low resistance between the source and drain terminals, reducing the flow of current from the source to the drain. When the gate voltage is less than the threshold voltage, the device is switched to its low-conductance "off" state, reducing the flow of current from the source to the drain.

In addition, the body-diode functionality of the ZXMD65N02N8TA helps to reduce any EMI (electromagnetic interference) caused by the device. The body-diode acts as a shield that prevents the drain current from being conducted to the gate circuit and source terminal, thus helping to reduce the EMI. This ensures that the device has a high level of reliability and protection from harm.

Overall, the ZXMD65N02N8TA is a highly efficient, high-current carrying power MOSFET array that is highly suitable for motor-driving, motor control, and other applications. With its combination of dual ports and body-diode shield, the device is able to provide an extra level of protection and reliability. This makes it an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference