Allicdata Part #: | ZXMD63N03XTC-ND |
Manufacturer Part#: |
ZXMD63N03XTC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2N-CH 30V 2.3A 8MSOP |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 2.3A 1.04W Sur... |
DataSheet: | ZXMD63N03XTC Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 2.3A |
Rds On (Max) @ Id, Vgs: | 135 mOhm @ 1.7A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 290pF @ 25V |
Power - Max: | 1.04W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Supplier Device Package: | 8-MSOP |
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A ZXMD63N03XTC is an integrated circuit (IC) consisting of a linear array of insulated-gate field-effect transistors (IGFETs) connected on a single chip. This device, also known as “powerFET,” is commonly used in a wide range of applications, including solid-state relays, power switches, motor controllers, and switching regulators. It is capable of providing high current and voltage handling, as well as efficient control characteristics.
The ZXMD63N03XTC is a three-phase device with a structure of three insulated-gate field-effect transistors (IGFETs) connected on the same chip. Each IGFET is configured in a totem-pole structure, consisting of drain and source sides that act as the two main terminals of the device. Each side is also connected to a gate, which allows for current and voltage control. This device is typically used for switching applications and can operate in two states: on and off. When the gate voltage is applied, the device switches on, and when the gate voltage is removed, the device switches off.
The ZXMD63N03XTC has several advantages over other powerFETs, such as other powerMOSFETs. It operates on lower gate voltages and provides lower gate-drain capacitance, allowing for a faster switching speed. In addition, its drain-source voltage rating of 600 V is higher than that of other similar devices. Furthermore, it offers both hardware and software protection for protecting against short-circuit and overcurrent. Finally, it is a highly reliable device with a long lifetime and low switching losses.
The main application areas for the ZXMD63N03XTC are circuits that require high current switching and low switching losses. It is widely used in solid-state relays, motor controllers, and switch-mode power supplies, as well as in automotive, lighting, and consumer electronics applications. Its ability to provide high current, low switching losses, and high reliability make it a great choice for these applications.
In conclusion, the ZXMD63N03XTC is a device that provides high current and voltage handling, efficient control, and protection against short-circuit and overcurrent. Its applications include solid-state relays, motor controllers, and switch-mode power supplies, among others. Furthermore, its high reliability and low switching losses make it a great choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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