ZXMD63P02XTA Discrete Semiconductor Products

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The ZXMD63P02XTA is an advanced P-channel MOSFET array, designed using high-performance and low-power technology for dynamically powering devices and circuits. This MOSFET array combines the low on-resistance of the ZXMD63P02XTA P-channel MOSFETs and the minimal switching energy of the ZXMD63P02XTA N-channel MOSFETs into one convenient package. By combining the low on-resistance and minimal switching energy together, the ZXMD63P02XTA provides excellent performance in a variety of applications.

The use of MOSFET technology in conjunction with an array design allows for greater flexibility in application design, as well as efficiency. The ZXMD63P02XTA features an enhanced body diode that reduces conduction power losses for improved efficiency. With this improved efficiency, the ZXMD63P02XTA can be used for a variety of applications. Some of these applications include power switches, motor control circuits, signal switching systems, and power conversion systems.

The ZXMD63P02XTA has a maximum input voltage of +12V, an operating current of 175mA, and a power dissipation of 3.5 W. It is capable of operating in a fully saturated mode, meaning that it can be used in applications where the input signal stays below the threshold voltage. Additionally, the ZXMD63P02XTA also includes a built-in level shifter, allowing for an easy connection between low-voltage and high-voltage devices. With these features, the ZXMD63P02XTA is well-suited for a wide range of applications.

Another feature of the ZXMD63P02XTA is the integrated ESD protection, which protects the device from electrostatic discharges. The ESD protection is rated for a peak of 8 kV, making it suitable for applications that require stringent ESD protection. This protection is especially important for use in high-voltage and sensitive electronics systems, where a sudden electrical shock could cause serious damage.

The ZXMD63P02XTA also provides an on-time of up to 10µs, ensuring fast response times in applications that require quick switching. Additionally, it operates with supply voltages between 4.5V and 12V, making it suitable for use in a wide variety of applications.

Finally, the ZXMD63P02XTA features a low resistance channel, which makes it suitable for use in battery-powered applications. Battery-powered applications often require high efficiency, and the low on-resistance of the P-channel enables higher efficiency when compared to other types of MOSFETs.

Overall, the ZXMD63P02XTA is an advanced MOSFET array that combines the low on-resistance of the P-channel MOSFETs and the minimal switching energy of the N-channel MOSFETs into one convenient package. This device is highly suitable for use in a variety of applications, including power switches, motor control circuits, signal switching systems, and power conversion systems, due to its low on-resistance, minimal switching energy, and integrated ESD protection. Additionally, the ZXMD63P02XTA provides an on-time of up to 10µs, operating voltage range of 4.5V to 12V, and a low resistance channel, which makes it suitable for use in battery-powered applications. As such, the ZXMD63P02XTA is an ideal choice for a wide range of applications.

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