ZXTD09N50DE6TC Allicdata Electronics
Allicdata Part #:

ZXTD09N50DE6TC-ND

Manufacturer Part#:

ZXTD09N50DE6TC

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS 2NPN 50V 1A SOT23-6
More Detail: Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 1A...
DataSheet: ZXTD09N50DE6TC datasheetZXTD09N50DE6TC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 1.1W
Frequency - Transition: 215MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-26
Base Part Number: ZXTD09N50D
Description

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The ZXTD09N50DE6TC is a 40 V N-Channel enhancement-mode device specifically designed as an array of at least 16 connected transistors in a single molding compound. It is suitable for high-side switching applications, and it can provide a high level of performance and reliability for a wide range of applications. This array of transistors is commonly known as a Power MOSFET, and it utilizes a unique substrate to enhance its electrical properties.

The ZXTD09N50DE6TC is mainly used as a switch in a wide range of applications, such as motor control and high-side switching. Its robust construction allows it to handle large currents, while its small size allows it to be used in tight spaces or even on printed circuit boards (PCB). Additionally, its high switching frequency of 5 MHz combined with its low static resistance of 0.5 ohms make it highly suitable for applications such as switching in power systems.

The ZXTD09N50DE6TC is a high-efficiency, high-power array of transistors. The array has a built-in driver that prevents the transistors from becoming overheated, and it also has built-in protection against overvoltage and short-circuit damage. The transistors in the array are connected in parallel, so the total power delivered by the array is equal to the power delivered by each individual transistor.

The ZXTD09N50DE6TC is one of the most popular choices for high-side switching applications, and it utilizes a combination of N-Channel and P-Channel MOSFETs. This combination increases the power handling ability of the device and allows it to operate at higher temperatures than single-channel devices. The transistors in the device are arranged symmetrically in a single row or column, and this allows the device to be easily configured for many different applications.

The working principle of the ZXTD09N50DE6TC is based on the same technology as an N-Channel MOSFET. When a gate voltage is applied by a voltage source, the voltage on the gate controls the current that flows through the device. This current is then delivered through the source, drain and substrate to the load. Due to its enhancement-mode design, the ZXTD09N50DE6TC can be used to switch both high- and low-side. The device can also be used for applications that require high switching frequencies, as it has a high switching frequency of 5 MHz. Additionally, the device can be operated in either pulsed or continuously mode.

The ZXTD09N50DE6TC is a highly reliable, high-performance device suitable for a variety of high-side switching purposes. It is robust and has strong built-in protection functions to prevent device failure, and its high switching frequency of 5 MHz ensures smooth operation. The device is also relatively small, making it suitable for applications where space is limited. Furthermore, the device is capable of being configured for many different types of applications, allowing it to be used for a variety of different tasks.

The specific data is subject to PDF, and the above content is for reference

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