ZXTDC3M832TA Discrete Semiconductor Products |
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Allicdata Part #: | ZXTDC3M832TATR-ND |
Manufacturer Part#: |
ZXTDC3M832TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN/PNP 50V/40V 4A/3A 8MLP |
More Detail: | Bipolar (BJT) Transistor Array NPN, PNP 50V, 40V 4... |
DataSheet: | ZXTDC3M832TA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN, PNP |
Current - Collector (Ic) (Max): | 4A, 3A |
Voltage - Collector Emitter Breakdown (Max): | 50V, 40V |
Vce Saturation (Max) @ Ib, Ic: | 320mV @ 200mA, 4A / 370mV @ 250mA, 2.5A |
Current - Collector Cutoff (Max): | 25nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 2A, 2V / 60 @ 1.5A, 2V |
Power - Max: | 1W |
Frequency - Transition: | 165MHz, 190MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-VDFN Exposed Pad |
Supplier Device Package: | 8-MLP (3x2) |
Base Part Number: | ZXTDC3M832 |
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ZXTDC3M832TA Application Field and Working Principle
The ZXTDC3M832TA is part of the bipolar junction transistor (BJT) arrays family and is used in a variety of applications. It is a transistor array that consists of eight NPN transistors in a single package, each with a common emitter and base, and either a common collector or an individual collector for every transistor.
There are multiple uses for the ZXTDC3M832TA, but it is most often used in applications that require multiple-transistor switching and logic level processing. It is ideal for voltage regulators, logic circuits, and motor controls. It is also utilized in the outputs of operational amplifiers and other applications that require multiple-transistor switching. This transistor array is able to reduce a variety of components, furthering making it ideal for applications in need of a more space-efficient solution.
The ZXTDC3M832TA offers a high input and gain linearity, wide dynamic range, low power consumption and excellent switching characteristics. The minimum base current required to turn the output transistors on is 10mA, and the transistors have a maximum collector-emitter voltage rating of 80V. In addition, it has an operating temperature range of -55°C to +125°C.
Working Principle
The ZXTDC3M832TA consists of eight individually controllable NPN transistors, each with its own base and collector. To turn the transistor on, a positive voltage is applied to the base. This causes a current to flow from the base to the collector, which in turn creates a voltage drop between the collector and the emitter. This voltage drop is known as the base-emitter voltage and it is used to control the amount of current flowing through the transistor.
The ZXTDC3M832TA is an ideal choice for applications where multiple-transistor switching is required. It is able to reduce the amount of components used, which further enhances its efficiency. In addition, its high input and gain linearity, wide dynamic range, and low power consumption provide excellent switching characteristics.
Conclusion
The ZXTDC3M832TA is an ideal choice for applications requiring multiple-transistor switching. Its high input and gain linearity, wide dynamic range, low power consumption, and excellent switching characteristics allow it to work efficiently and effectively. In addition, its small size makes it ideal for applications where space is limited. Overall, the ZXTDC3M832TA is a great choice for applications requiring multiple-transistor switching.
The specific data is subject to PDF, and the above content is for reference
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TRANS NPN/PNP 45V 0.1A 6DFNBipolar (BJT)...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
IC INTEGRATED CIRCUITBipolar (BJT) Trans...