ZXTDE4M832TA Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN, PNP
Current - Collector (Ic) (Max):	3.5A, 2.5A
Voltage - Collector Emitter Breakdown (Max):	80V, 70V
Vce Saturation (Max) @ Ib, Ic:	325mV @ 300mA, 3.5A / 260mV @ 200mA, 1.5A
Current - Collector Cutoff (Max):	25nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	300 @ 200mA, 2V / 40 @ 1.5A, 5V
Power - Max:	1W
Frequency - Transition:	160MHz, 180MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-VDFN Exposed Pad
Supplier Device Package:	8-MLP (3x2)
Base Part Number:	ZXTDE4M832

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ZXTDE4M832TA, which is classified as a Transistor-Bipolar (BJT) Arrays, is a powerful tool for two main applications. This article will cover the ZXTDE4M832TA\'s application fields and working principles by providing detailed descriptions.

Firstly, Application Fields of the ZXTDE4M832TA:
The ZXTDE4M832TA is an integrated device package that consists of sixteen NPN ultra-high speed transistors. The device is designed for high speed switching and is optimum for low voltage, small size, and low cost applications. Its typical applications include 2.4 GHz RF differential amplifiers, DC to DC converters, power management ICs, motor control, and discrete switching. Secondly, Working Principles of the ZXTDE4M832TA:
The ZXTDE4M832TA includes sixteen NPN transistors in a hermetic ceramic and plastic package. Each transistor is constructed using a lateral epitaxial NPN process and is connected internally in cascode configuration to reduce the power dissipation and to improve the electrical performance characteristics. The collector of each transistor is connected to the emitter of the next transistor. This arrangement, when taken together with the package connections, forms an internally cascoding configuration, which maintains a high output impedance, resulting in a receiver with a low input capacitance, which may significantly reduce the distortion level. When each transistor is biased with a constant current, it possesses an inherent linear transfer characteristic, allowing it to effectively control both the voltage and current signals in the circuit. In addition, since the current is constant, the circuit can instantly switch from one mode to another with very low transient. Furthermore, the low input capacitance of the transistors will allow for a low-distortion, high-efficiency signal processing. The ZXTDE4M832TA also uses a unique layout and process optimization to provide consistent high performance from one device to another. This layout also takes into consideration the collector-emitter leakage current and the base-emitter capacitance, ensuring the device operates at a low current and a high speed.Conclusion:
The ZXTDE4M832TA is a powerful tool for two main applications. It is suitable for applications such as 2.4 GHz RF differential amplifiers, DC to DC converters, power management ICs, motor control, and discrete switching. Its internal stackable NPN transistors are arranged in a cascode configuration, which offers low distortion and improved signal processing characteristics. In addition, its unique layout and process optimization allow the device to operate at a high speed and a low current, making it a great addition to any application.

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