ZXTD2M832TA Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	2 PNP (Dual)
Current - Collector (Ic) (Max):	3.5A
Voltage - Collector Emitter Breakdown (Max):	20V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 350mA, 3.5A
Current - Collector Cutoff (Max):	25nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	150 @ 2A, 2V
Power - Max:	1.7W
Frequency - Transition:	180MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-VDFN Exposed Pad
Supplier Device Package:	8-MLP (3x2)
Base Part Number:	ZXTD2M832

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Introduction to the ZXTD2M832TA

The ZXTD2M832TA is a high-bandwidth dual NPN array transistor manufactured by Diodes Incorporated. Featuring an easy-to-mount style, the ZXTD2M832TA is an ideal choice for high-speed signal processing and analog-to-digital applications. This technology makes the ZXTD2M832TA an ideal choice for both low- and high-power applications, as well as being capable of providing significant voltage gain.

Application Fields of the ZXTD2M832TA

The ZXTD2M832TA can be used in a variety of applications, ranging from digital signal processing, linear amplifiers, and motor control to instrumentation and sensors. This transistor can also be utilized in amplifiers, level shifters, and RF power transistors.In terms of digital signal processing, the ZXTD2M832TA has the potential to reduce power consumption and improve signal quality. By providing a high-bandwidth performance, the transistor can help to reduce the power consumption on a power supply, as well as improve the signal-to-noise ratio in amplification applications. In addition, the ZXTD2M832TA can help to improve the linearity of the device, particularly when used as an amplifier.In terms of motor control applications, the ZXTD2M832TA can be used to improve the speed and accuracy of the pulse-width modulation circuits used in brushless DC motors. This technology can also be used for position control of hydraulic and pneumatic valves.In terms of instrumentation and sensors, the ZXTD2M832TA can be utilized in devices that require ultra-low power consumption, such as pressure and temperature transducers.

Working Principle of the ZXTD2M832TA

The ZXTD2M832TA utilizes two NPN transistors biased in a common-base configuration. This configuration ensures a wide range of voltage gain, and allows the output of the device to be more accurately controlled. This results in the transistor being capable of providing extremely high voltage gain, with a bandwidth of up to 200MHz.In addition, the ZXTD2M832TA is capable of providing low-offset and distortion, as well as low-noise and high-speed. This makes the device ideal for applications such as level shifting, RF power transistors, and linear amplifiers.The ZXTD2M832TA is also well-suited for applications that require complex control signals. It can provide a way to accurately control timing, frequency, and amplitude of the drive signals. This is particularly useful in applications where accuracy and repeatability are critical.

Conclusion

The ZXTD2M832TA is a high-bandwidth dual NPN array transistor manufactured by Diodes Incorporated. It is an ideal choice for high-speed signal processing, analog-to-digital applications, and other high-power applications. The ZXTD2M832TA utilizes two NPN transistors biased in a common-base configuration, and can provide a wide range of voltage gain, as well as low-offset and distortion. In addition, the ZXTD2M832TA is well-suited for applications that require complex control signals and can help to reduce power consumption and improve signal quality.

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