ZXTD1M832TA Allicdata Electronics

ZXTD1M832TA Discrete Semiconductor Products

Allicdata Part #:

ZXTD1M832TATR-ND

Manufacturer Part#:

ZXTD1M832TA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS 2PNP 12V 4A 8MLP
More Detail: Bipolar (BJT) Transistor Array 2 PNP (Dual) 12V 4A...
DataSheet: ZXTD1M832TA datasheetZXTD1M832TA Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 150mA, 4A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2.5A, 2V
Power - Max: 1.7W
Frequency - Transition: 110MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-MLP (3x2)
Base Part Number: ZXTD1M832
Description

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Transistors - Bipolar (BJT) - Arrays

The ZXTD1M832TA is a powerful and reliable array of transistors from a family of bipolar junction transistors (BJT). Developed by Zilog\'s advanced technology division, the ZXTD1M832TA is designed to offer superior performance in a wide range of applications. In this article, we\'ll take a look at the application field and working principle of the ZXTD1M832TA.

Application Field

The ZXTD1M832TA is ideal for applications that require high levels of performance, such as audio, digital signal processing, and automotive applications. The ZXTD1M832TA is also used in low-power and high-speed applications, such as power circuits, high-speed operations, and peak current switching. Additionally, the ZXTD1M832TA has also found applications in many other markets such as instrumentation, medical applications, and computer control.

Working Principle

The ZXTD1M832TA is an array of eight NPN transistors. The transistors form a series connection and operate in a common-emitter configuration. The signals at the base of the transistors are amplified by the transistors and the output signals are generated by the emitter. The structure of the ZXTD1M832TA is optimized for high frequency operation and fast switching. The gain of the array is adjustable by selecting the appropriate combination of the transistors. The array also offers high common-mod mode noise immunity and power dissipation for improved performance.

The ZXTD1M832TA is also designed for improved thermal and electrical performance. The array uses a patented substrate contact technology which maximizes heat dissipation and reduces the power consumption. The ZXTD1M832TA also has an adjustable bias circuit which allows the array to be used in different application types. Additionally, the ZXTD1M832TA also has an integrated power shut-off circuit which helps to provide improved noise immunity.

When using the ZXTD1M832TA, it is important to ensure that the output signals meet the specified application requirements. The device can be operated at supply voltages ranging from 2.7V to 10.0V, and the ZXTD1M832TA also has a wide range of operating temperatures, ranging from -40 °C to +125 °C. It is important to note that the device should not be used in extreme temperatures.

In conclusion, the ZXTD1M832TA is a powerful and reliable array of transistors from a family of bipolar junction transistors (BJT). It is ideal for applications that require high levels of performance offering good thermal and electrical performance. The ZXTD1M832TA is also designed for improved noise immunity and integrated power shut-off circuits.

The specific data is subject to PDF, and the above content is for reference

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