ZXTDBM832TA Allicdata Electronics

ZXTDBM832TA Discrete Semiconductor Products

Allicdata Part #:

ZXTDBM832TATR-ND

Manufacturer Part#:

ZXTDBM832TA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS 2NPN 20V 4.5A 8MLP
More Detail: Bipolar (BJT) Transistor Array 2 NPN (Dual) 20V 4....
DataSheet: ZXTDBM832TA datasheetZXTDBM832TA Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 4.5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 125mA, 4.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Power - Max: 1.7W
Frequency - Transition: 140MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-MLP (3x2)
Base Part Number: ZXTDBM832
Description

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Introduction to ZXTDBM832TA

The ZXTDBM832TA is a four-channel array of high-voltage, low-power, N-channel depletion-mode MOSFETS (Metal-Oxide Semiconductor Field-Effect Transistors). It is a 40V device and operates from -50V to 40V. Fabricated in a monolithic structure and built utilizing advanced process technology, these devices also feature an integrated ESD protection circuitry for enhanced robustness and reliability.The ZXTDBM832TA is an ideal solution for buffering and multiplexing applications in noisy environments and offers superior performance. It can be used in a variety of applications such as switching, pulsed circuits, and driver stages; it is widely used in motor control applications where noise-free operation is essential.

Uses and Applications of ZXTDBM832TA

The ZXTDBM832TA is an ideal solution for low-noise, high-current applications like motor control; it is also used in pulse-width modulated circuits, switch-mode power supplies, and current-source applications. When used in motor control applications, this device helps to reduce the noise level from both the input and output ends of the circuit and provides superior robustness and reliability.The device\'s low-power consumption allows for cost savings and the integrated ESD protection ensures greater longevity and better performance. As it can withstand up to 40V, the ZXTDBM832TA can be used in a range of high-voltage applications.

Working Principle of ZXTDBM832TA

The ZXTDBM832TA operates as a four-channel array, with each channel of MOSFETS having its own control circuitry. The whole array operates on the principle of control and depletion of N-channel MOSFETs.When the device is powered on, the gate-to-source voltage of the MOSFET is negative, which reduces the intrinsic threshold voltage. This results in increased channel conductance, allowing current to flow through the device. Since a MOSFET is a voltage-controlled device, its gate-to-source voltage can be used to modify the amount of current flowing through it.When the voltage applied to the gate is close to the source voltage, the MOSFET enters the so-called \'enhancement mode\'; in this configuration, the device acts as a switch. A positive gate voltage can be used to control the device and switch it off, leading to a decrease in current flow in the entire circuit, thus switching off any connected devices.

Conclusion

The ZXTDBM832TA is a four-channel array of high-voltage, low-power, N-channel depletion-mode MOSFETs and is ideal for buffering and multiplexing applications. It provides superior performance and cost savings and its integrated ESD protection circuitry gives it greater robustness and reliability.This device is widely used in motor control applications, as the array reduces the noise level from both the input and output ends of the circuit, while providing superior longevity and better performance. The ZXTDBM832TA can also be used in a variety of applications such as switching, pulsed circuits, and driver stages. It operates using the principle of control and depletion of N-channel MOSFETs.

The specific data is subject to PDF, and the above content is for reference

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