Aec-q100 bridge driver - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
S25FL064LABMFM0 13-ND	S25FL064LABMFM0 13	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, FL-L Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Clock Frequency: 108MHz Memory Interface: SPI - Quad I/O, QPI Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 125C (TA)	1000 Order	2100+: $1.8304
1450-1444-ND	AS4C256M16D3B-1 2BAN	Alliance Memory, Inc.	View more Series: Automotive, AEC-Q100 Packaging: Tray Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 4Gb (256M x 16) Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Memory Interface: Parallel Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40C ~ 105C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (13.5x9)	39 Order	1+: $8.7948 10+: $8.1465 25+: $8.033 50+: $7.9344 180+: $6.9537 360+: $6.6531 540+: $6.6087
CAV93C46VE-GT3- ND	CAV93C46VE-GT3	ON Semiconductor	View more Series: Automotive, AEC-Q100 Part Status: Active Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Clock Frequency: 2MHz Memory Interface: SPI Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40C ~ 125C (TA)	1000 Order	3000+: $0.1781
S25FL064LABMFB0 13-ND	S25FL064LABMFB0 13	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, FL-L Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Clock Frequency: 108MHz Memory Interface: SPI - Quad I/O, QPI Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	--
AS4C128M8D3B-12 BAN-ND	AS4C128M8D3B-12 BAN	Alliance Memory, Inc.	View more Series: Automotive, AEC-Q100 Packaging: Tray Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gb (128M x 8) Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Memory Interface: Parallel Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40C ~ 105C (TC) Mounting Type: Surface Mount Package / Case: 78-VFBGA Supplier Device Package: 78-FBGA (10.5x8)	1000 Order	242+: $3.6627 484+: $3.5517 726+: $3.3779 1210+: $3.2595
MT29F4G08ABADAH 4-AATX:D-ND	MT29F4G08ABADAH 4-AATX:D	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	1+: $0
S25FS512SDSBHA2 10-ND	S25FS512SDSBHA2 10	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, FS-S Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Clock Frequency: 80MHz Memory Interface: SPI - Quad I/O, QPI Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	338+: $4.8598
S25FS064SAGMFM0 10-ND	S25FS064SAGMFM0 10	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, FS-S Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Clock Frequency: 133MHz Memory Interface: SPI - Quad I/O, QPI Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40C ~ 125C (TA)	1000 Order	280+: $1.9615
S34MS04G200BHA0 00-ND	S34MS04G200BHA0 00	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, MS-2 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Write Cycle Time - Word, Page: 45ns Access Time: 45ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	210+: $6.3849
S25FL256SAGNFB0 00-ND	S25FL256SAGNFB0 00	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, FL-S Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Clock Frequency: 133MHz Memory Interface: SPI - Quad I/O Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	338+: $3.3826
S29GL01GT10TFA0 13-ND	S29GL01GT10TFA0 13	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, GL-T Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (128M x 8) Write Cycle Time - Word, Page: 60ns Access Time: 100ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1000+: $5.3892
MT25QU256ABA8ES F-0AAT-ND	MT25QU256ABA8ES F-0AAT	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Clock Frequency: 133MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Memory Interface: SPI Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40C ~ 105C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOP2	1000 Order	1+: $0
S34ML08G201BHB0 03-ND	S34ML08G201BHB0 03	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, ML-2 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 8Gb (1G x 8) Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	2300+: $11.3478
1450-1263-ND	AS4C8M16SA-6BAN	Alliance Memory, Inc.	View more Series: Automotive, AEC-Q100 Packaging: Tray Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (8M x 16) Clock Frequency: 166MHz Write Cycle Time - Word, Page: 12ns Access Time: 5ns Memory Interface: Parallel Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	487 Order	1+: $3.1563 10+: $2.8652 25+: $2.8027 50+: $2.7873 100+: $2.4997 348+: $2.4904 696+: $2.3986 1044+: $2.2805
S25FS128SAGMFB1 03-ND	S25FS128SAGMFB1 03	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, FS-S Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Clock Frequency: 133MHz Memory Interface: SPI - Quad I/O, QPI Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	2100+: $2.0514
MT29F4G08ABAFAH 4-AATES:FTR-ND	MT29F4G08ABAFAH 4-AATES:F TR	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TC)	1000 Order	1+: $0
428-4253-ND	S34ML02G200BHB0 00	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, ML-2 Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Gb (256M x 8) Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-BGA (11x9)	535 Order	--
1450-1378-ND	AS4C256M16D3A-1 2BAN	Alliance Memory, Inc.	View more Series: Automotive, AEC-Q100 Packaging: Tray Part Status: Obsolete Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 4Gb (256M x 16) Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Memory Interface: Parallel Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40C ~ 105C (TC) Mounting Type: Surface Mount Package / Case: 96-VFBGA Supplier Device Package: 96-FBGA (13x8)	253 Order	1+: $8.7948 10+: $8.1465 25+: $8.033 50+: $7.9344 190+: $6.9536
MT29F4G08ABADAW P-AATX:D-ND	MT29F4G08ABADAW P-AATX:D	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	1+: $0
S25FL512SAGMFMG 13-ND	S25FL512SAGMFMG 13	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, FL-S Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Clock Frequency: 133MHz Memory Interface: SPI - Quad I/O Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 125C (TA)	1000 Order	1450+: $5.7863
S34ML08G201TFA0 00-ND	S34ML08G201TFA0 00	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, ML-2 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 8Gb (1G x 8) Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	96+: $14.0565
S70GL02GS12FHB0 10-ND	S70GL02GS12FHB0 10	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, GL-S Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 2Gb (128M x 16) Access Time: 120ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (11x13)	1000 Order	180+: $17.5365
S25FL116K0XNFB0 10-ND	S25FL116K0XNFB0 10	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, FL1-K Part Status: Last Time Buy Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 16Mb (2M x 8) Clock Frequency: 108MHz Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	490+: $0.7546
MT29F2G16ABBEAH 4-AAT:E-ND	MT29F2G16ABBEAH 4-AAT:E	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	1+: $0
MT28FW512ABA1HJ S-0AAT-ND	MT28FW512ABA1HJ S-0AAT	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (32M x 16) Write Cycle Time - Word, Page: 60ns Access Time: 105ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP (14x20)	1000 Order	1+: $0
DS2431P-A1+-ND	DS2431P-A1+	Maxim Integrated	View more Series: Automotive, AEC-Q100 Packaging: Tube Part Status: Active Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (256 x 4) Access Time: 2s Memory Interface: 1-Wire Operating Temperature: -40C ~ 125C (TA) Mounting Type: Surface Mount Package / Case: 6-LSOJ (0.148", 3.76mm Width) Supplier Device Package: 6-TSOC Base Part Number: DS2431	83 Order	1+: $2.0664 10+: $1.9606 25+: $1.8126 50+: $1.7219 100+: $1.5545 250+: $1.4768 1000+: $1.1038
CAV93C46YE-GT3- ND	CAV93C46YE-GT3	ON Semiconductor	View more Series: Automotive, AEC-Q100 Part Status: Active Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Clock Frequency: 2MHz Memory Interface: SPI Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40C ~ 125C (TA)	1000 Order	3000+: $0.1991
S29GL256N11FFA0 13-ND	S29GL256N11FFA0 13	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, GL-N Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8, 16M x 16) Write Cycle Time - Word, Page: 110ns Access Time: 110ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1600+: $7.1511
S34MS08G201BHB0 03-ND	S34MS08G201BHB0 03	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, MS-2 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 8Gb (1G x 8) Write Cycle Time - Word, Page: 45ns Access Time: 45ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	2300+: $9.8839
MT28EW01GABA1HP C-0AAT-ND	MT28EW01GABA1HP C-0AAT	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (128M x 8, 64M x 16) Write Cycle Time - Word, Page: 60ns Access Time: 105ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-LBGA (11x13)	1000 Order	--
MT29AZ5A3CHHWD- 18AAT.84F-ND	MT29AZ5A3CHHWD- 18AAT.84F	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH, RAM Technology: FLASH - NAND, Mobile LPDRAM Memory Size: 4Gb (512M x 8)(NAND), 8Gb (512M x 16)(LPDDR2) Clock Frequency: 533MHz Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	1+: $0
S34MS01G200TFB0 00-ND	S34MS01G200TFB0 00	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, MS-2 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Write Cycle Time - Word, Page: 45ns Access Time: 45ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	96+: $3.3605
S71KL512SC0BHB0 03-ND	S71KL512SC0BHB0 03	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, HyperFlash + HyperRAM KL Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH, RAM Technology: FLASH, DRAM Memory Size: 512Mbit Flash, 64Mbit RAM Clock Frequency: 100MHz Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	2500+: $5.42
S26KS512SDPBHA0 23-ND	S26KS512SDPBHA0 23	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, HyperFlash KS Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Clock Frequency: 166MHz Access Time: 96ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	2500+: $5.9819
IS26KL512S-DABL A300-ND	IS26KL512S-DABL A300	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, HyperFlash KL Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Clock Frequency: 100MHz Access Time: 96ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 125C (TA)	1000 Order	338+: $8.9005
MT28FW512ABA1HP C-0AAT-ND	MT28FW512ABA1HP C-0AAT	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (32M x 16) Write Cycle Time - Word, Page: 60ns Access Time: 105ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-LBGA (11x13)	1000 Order	1+: $0
MT29F4G08ABAFAW P-AATES:F-ND	MT29F4G08ABAFAW P-AATES:F	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TC)	1000 Order	1+: $0
S25FL064LABMFA0 13-ND	S25FL064LABMFA0 13	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, FL-L Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Clock Frequency: 108MHz Memory Interface: SPI - Quad I/O, QPI Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	--
S29GL064N90TFA0 10-ND	S29GL064N90TFA0 10	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, GL-N Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Write Cycle Time - Word, Page: 90ns Access Time: 90ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	91+: $3.1624
MT28FW01GABA1LP C-0AAT-ND	MT28FW01GABA1LP C-0AAT	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (64M x 16) Write Cycle Time - Word, Page: 60ns Access Time: 105ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-LBGA (11x13)	1000 Order	1+: $0

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