AS4C256M16D3A-12BAN Allicdata Electronics
Allicdata Part #:

1450-1378-ND

Manufacturer Part#:

AS4C256M16D3A-12BAN

Price: $ 9.67
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 4G PARALLEL 96FBGA
More Detail: SDRAM - DDR3 Memory IC 4Gb (256M x 16) Parallel 80...
DataSheet: AS4C256M16D3A-12BAN datasheetAS4C256M16D3A-12BAN Datasheet/PDF
Quantity: 253
1 +: $ 8.79480
10 +: $ 8.14653
25 +: $ 8.03299
50 +: $ 7.93436
190 +: $ 6.95363
Stock 253Can Ship Immediately
$ 9.67
Specifications
Series: Automotive, AEC-Q100
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 4Gb (256M x 16)
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-VFBGA
Supplier Device Package: 96-FBGA (13x8)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AS4C256M16D3A-12BAN is a type of Double-Data-Rate Thrid (DDR3) synchronous dynamic random access memory (SDRAM) device manufactured by Alliance Memory Inc. This device offers a number of features, including high speed and low power consumption. The main applications of this device are in the fields of computer, embedded control systems, automotive, industrial automation and communication.

The AS4C256M16D3A-12BAN device has a 64M x 16-bit structure, with a data bus of 16 bits width. The device also has a clock frequency of up to 1600 MHz (1.6 GHz). Its package size is a 68 pin ball grid array (BGA). This device is designed to work with a single 2.5V power supply and DDR3/DDR3L signaling levels and timing.

The working principle of the AS4C256M16D3A-12BAN is based on the use of a memory array arranged in rows and columns, with the cells arranged in a matrix configuration. Each cell is capable of storing one bit of data, and is controlled by a row address and a corresponding column address. Data is written to and read from the memory array by accessing the memory cells through the row/column matrix.

The device has an on-chip asynchronous reset circuit and a burst length of two clock cycles for read and write transitions. It also has a data burst length of 16 and 8 clock cycles for read and write operations respectively. On top of that, the device has auto refresh and temperature-compensated auto refresh (TCAR) to ensure data integrity.

Overall, the AS4C256M16D3A-12BAN device is a reliable and high-performance memory device which can be used in a variety of applications. Its main application fields are in the fields of computer, embedded control systems, automotive, industrial automation and communication. In addition, its low power consumption and high speed make it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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